STF8234

Green Product STF8234 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 5.2 @ VGS=4.5V 5.3 @ VGS=4.0V 20V 14A 5.4 @ VGS=3.7V 5.9 @ VGS=3.1V 6.8 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D D D G S S P IN 1 G D T DF N 2X3 (Bottom view) S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 20 ±12 TA=25°C TA=70°C TA=25°C TA=70°C 14 11.2 80 a Units V V A A A W W °C Maximum Power Dissipation 1.8 1.1 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 70 °C/W Details are subject to change without notice. Nov,09,2012 1 www.samhop.com.tw STF8234 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) VGS=0V , ID=250uA VDS=18V , VGS=0V 20 1 ±10 V uA uA VGS= ±12V , VDS=0V VDS=VGS , ID=1.0mA VGS=4.5V , ID=7A VGS=4.0V , ID=7A VGS=3.7V , ID=7A VGS=3.1V , ID=7A VGS=2.5V , ID=7A VDS=5V , ID=7A 0.5 3.0 3.1 3.3 3.5 4.0 0.85 3.9 4.0 4.1 4.4 5.0 56 1.5 ...