Document
Green Product
STF8810
Ver 1.3
S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
16.0 @ VGS=4.5V 17.0 @ VGS=4.0V 20V 8.0A 18.0 @ VGS=3.7V 21.0 @ VGS=3.1V 27.5 @ VGS=2.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
G2 S2 G1 S1 S1
P IN 1
Bottom Drain Contact S2
G1 S1
T D F N 2X 3
3 2 1
4 G2 5 6 S2 S2
D1/D2
S1
(Bottom view)
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
ac c
Limit 20 ±12 TA=25°C TA=70°C TA=25°C TA=70°C 8.0 6.4 48 1.56 1.00 -55 to 150
Units V V A A A W W °C
Maximum Power Dissipation Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
80
°C/W
Details are subject to change without notice.
Jul,18,2014
1
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STF8810
Ver 1.3
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions
VGS=0V , ID=250uA VDS=16V , VGS=0V
Min 20
Typ
Max
Units V uA uA
OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th)
VGS= ±8V , VDS=0V
1 ±1
VDS=VGS , ID=1.0mA VGS=4.5V , ID=2.0A VGS=4.0V , ID=2.0A VGS=3.7V , ID=2.0A VGS=3.1V , ID=2.0A VGS=2.5V , ID=2.0A VDS=10V , ID=4.0A
0.5 10.0 10.5 11.0 12.5 16.5
0.9 13.0 13.5 14.0 16.0 20.5 16
1.5 16.0 17.0
V m ohm m ohm
RDS(ON)
Drain-Source On-State Resistance
18.0 m ohm 21.0 m ohm 27.5 m ohm S
gFS
Forward Transconductance
b
DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
b
VDS=10V,VGS=0V f=1.0MHz
307 144 69
pF pF pF
VDD=16V ID=4.0A VGS=4.0V RGEN=6 ohm VDS=16V,ID=8.0A, VGS=4.0V
68 293 697 567 9 1.8 5.4
ns ns ns ns nC nC nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage VSD VGS=0V,IS=8.0A
0.88
1.2
V
Notes
_ 1%. _ 10us, Duty Cycle < a.Pulse Test:Pulse Width < b.Guaranteed by design, not subject to production testing. c.Drain current limited by maximum junction temperature. d.Mounted on FR4 Board of 1 inch2 , 2oz.
Jul,18,2014
2
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STF8810
Ver 1.3
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
120
3
dT - Percentage of rated Power - %
PT - Total Power Dissipation - W
100 80 60 40 20 0 0 25 50 75 100 125 150 175
2.5 2 1.5 1 0.5 0 0 25 50 75 100 125 150 175
Mounted on FR-4 board of 1 inch2 , 2oz
TA - Ambient Temperature - °C
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
N) (O DS Lim it
10us 100us
ID - Drain Current - A
10
R
1
1ms 10ms 100ms
0.1
VGS=4.5V Single Pulse TA=25 C
1 10
DC
0.01 0.1
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(ch-A) - Transient Thermal Resistance - °C/W
100
Mounted on FR-4 board of 1 inch2 , 2oz
10
1
Single Pulse
0.1 0.001 0.01 0.1 1
PW - Pulse Width - s
10
100
1000
Jul,18,2014
3
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STF8810
Ver 1.3
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS
30
100
VGS = 4.5 V ID - Drain Current - A ID - Drain Current - A 4.0 V
20 10
3.7 V 3.1 V
10
1
125°C
TA = -25°C 25°C
2.5 V
0.1
75°C
0 0 0.2 0.4 0.6 0.8 1
0.01 0 0.5 1 1.5 2 2.5 3
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
VGS(off) - Gate to Source Cut-off Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
1.4
ЮyfsЮ- Forward Transfer Admittance - S
100
ID = 1.0mA
1.2
TA = -25°C
10
25°C 75°C
1
1
0.8
125°C
0.1
0.6
0.4 -50
0.01 0.01 0.1 1 10 100
0
50
100
150
Tch - Channel Temperature - °C
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - mΩ
50
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 40
ID = 2.0 A
30
40
VGS = 2.5 V 3.1 V 3.7 V 4.0 V
30
20
20
10
4.5 V
10
0 0.1 1 10 100
0
0
2
4
6
8
10
12
ID - Drain Current - A
VGS - Gate to Source Voltage - V
Jul,18,2014
4
www.samhop.com.tw
STF8810
Ver 1.3
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 30 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - mΩ
1000
3.1 V
25 20 15 10 5
3.7 V 4.0 V
Ciss, Coss, Crss - Capacitance - pF
VGS = 2.5 V
Ciss
100
Coss Crss
4.5 V
ID = 2.0 A
0 -50 0 50 100 150
10 0.1
1
10
100
Tch - Channel Temperature - °C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INP.