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STF8810 Dataheets PDF



Part Number STF8810
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet STF8810 DatasheetSTF8810 Datasheet (PDF)

Green Product STF8810 Ver 1.3 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 16.0 @ VGS=4.5V 17.0 @ VGS=4.0V 20V 8.0A 18.0 @ VGS=3.7V 21.0 @ VGS=3.1V 27.5 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G2 S2 G1 S1 S1 P IN 1 Bottom Drain Contact S2 G1 S1 T D F N 2X 3 3 2 1 4 G2 5 6 S2 S2 D1/D2 S1 (Bottom view) ABSOLUTE MAX.

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Green Product STF8810 Ver 1.3 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 16.0 @ VGS=4.5V 17.0 @ VGS=4.0V 20V 8.0A 18.0 @ VGS=3.7V 21.0 @ VGS=3.1V 27.5 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G2 S2 G1 S1 S1 P IN 1 Bottom Drain Contact S2 G1 S1 T D F N 2X 3 3 2 1 4 G2 5 6 S2 S2 D1/D2 S1 (Bottom view) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed ac c Limit 20 ±12 TA=25°C TA=70°C TA=25°C TA=70°C 8.0 6.4 48 1.56 1.00 -55 to 150 Units V V A A A W W °C Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 80 °C/W Details are subject to change without notice. Jul,18,2014 1 www.samhop.com.tw STF8810 Ver 1.3 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=16V , VGS=0V Min 20 Typ Max Units V uA uA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) VGS= ±8V , VDS=0V 1 ±1 VDS=VGS , ID=1.0mA VGS=4.5V , ID=2.0A VGS=4.0V , ID=2.0A VGS=3.7V , ID=2.0A VGS=3.1V , ID=2.0A VGS=2.5V , ID=2.0A VDS=10V , ID=4.0A 0.5 10.0 10.5 11.0 12.5 16.5 0.9 13.0 13.5 14.0 16.0 20.5 16 1.5 16.0 17.0 V m ohm m ohm RDS(ON) Drain-Source On-State Resistance 18.0 m ohm 21.0 m ohm 27.5 m ohm S gFS Forward Transconductance b DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge b VDS=10V,VGS=0V f=1.0MHz 307 144 69 pF pF pF VDD=16V ID=4.0A VGS=4.0V RGEN=6 ohm VDS=16V,ID=8.0A, VGS=4.0V 68 293 697 567 9 1.8 5.4 ns ns ns ns nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage VSD VGS=0V,IS=8.0A 0.88 1.2 V Notes _ 1%. _ 10us, Duty Cycle < a.Pulse Test:Pulse Width < b.Guaranteed by design, not subject to production testing. c.Drain current limited by maximum junction temperature. d.Mounted on FR4 Board of 1 inch2 , 2oz. Jul,18,2014 2 www.samhop.com.tw STF8810 Ver 1.3 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 120 3 dT - Percentage of rated Power - % PT - Total Power Dissipation - W 100 80 60 40 20 0 0 25 50 75 100 125 150 175 2.5 2 1.5 1 0.5 0 0 25 50 75 100 125 150 175 Mounted on FR-4 board of 1 inch2 , 2oz TA - Ambient Temperature - °C TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 N) (O DS Lim it 10us 100us ID - Drain Current - A 10 R 1 1ms 10ms 100ms 0.1 VGS=4.5V Single Pulse TA=25 C 1 10 DC 0.01 0.1 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - °C/W 100 Mounted on FR-4 board of 1 inch2 , 2oz 10 1 Single Pulse 0.1 0.001 0.01 0.1 1 PW - Pulse Width - s 10 100 1000 Jul,18,2014 3 www.samhop.com.tw STF8810 Ver 1.3 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 30 100 VGS = 4.5 V ID - Drain Current - A ID - Drain Current - A 4.0 V 20 10 3.7 V 3.1 V 10 1 125°C TA = -25°C 25°C 2.5 V 0.1 75°C 0 0 0.2 0.4 0.6 0.8 1 0.01 0 0.5 1 1.5 2 2.5 3 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V VGS(off) - Gate to Source Cut-off Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 1.4 ЮyfsЮ- Forward Transfer Admittance - S 100 ID = 1.0mA 1.2 TA = -25°C 10 25°C 75°C 1 1 0.8 125°C 0.1 0.6 0.4 -50 0.01 0.01 0.1 1 10 100 0 50 100 150 Tch - Channel Temperature - °C ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ 50 RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 40 ID = 2.0 A 30 40 VGS = 2.5 V 3.1 V 3.7 V 4.0 V 30 20 20 10 4.5 V 10 0 0.1 1 10 100 0 0 2 4 6 8 10 12 ID - Drain Current - A VGS - Gate to Source Voltage - V Jul,18,2014 4 www.samhop.com.tw STF8810 Ver 1.3 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 30 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ 1000 3.1 V 25 20 15 10 5 3.7 V 4.0 V Ciss, Coss, Crss - Capacitance - pF VGS = 2.5 V Ciss 100 Coss Crss 4.5 V ID = 2.0 A 0 -50 0 50 100 150 10 0.1 1 10 100 Tch - Channel Temperature - °C VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INP.


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