STF2454

Green Product STF2454 Ver 2.0 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 14.0 @ VGS=4.5V 14.3 @ VGS=4.0V 24V 8.0A 14.5 @ VGS=3.7V 16.5 @ VGS=3.1V 20.0 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G2 S2 G1 S1 S1 P IN 1 Bottom Drain Contact S2 G1 S1 T D F N 2X 3 3 2 1 4 G2 5 6 S2 S2 D1/D2 S1 (Bottom view) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 24 ±12 TA=25°C TA=70°C TA=25°C TA=70°C 8.0 6.4 30 a Units V V A A A W W °C Maximum Power Dissipation 1.56 1.00 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 80 °C/W Details are subject to change without notice. Apr,15,2011 1 www.samhop.com.tw STF2454 Ver 2.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=20V , VGS=0V Min 24 Typ Max Units V uA uA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) VGS= ±12V , VDS=0V 1 ±10 VDS=VGS , ID=1.0mA VGS=4.5V , ID=4.0A VGS=4.0V , ID=4.0A VGS=3.7V , ID=4.0A VGS=3.1V , ID=4.0A VGS=...