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HBR2045HF

Jilin Sino

SCHOTTKY BARRIER DIODE

R SCHOTTKY BARRIER DIODE HBR2045 IF(AV) VRRM Tj VF(max) MAIN CHARACTERISTICS 20(2×10)A 45 V 175 ℃ 0.6V (@Tj=125℃) ...



HBR2045HF

Jilin Sino


Octopart Stock #: O-845555

Findchips Stock #: 845555-F

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Description
R SCHOTTKY BARRIER DIODE HBR2045 IF(AV) VRRM Tj VF(max) MAIN CHARACTERISTICS 20(2×10)A 45 V 175 ℃ 0.6V (@Tj=125℃) Package TO-22O TO-22OF APPLICATIONS z High frequency switch z power supply z z Free wheeling diodes, polarity protection applications TO-220HF z z , z z , z (RoHS) FEATURES z Common cathode structure z Low power loss, high efficiency z High Operating Junction Temperature z Guard ring for overvoltage protection,High reliability z RoHS product ORDER MESSAGE Order codes HBR2045Z HBR2045ZR HBR2045F HBR2045FR HBR2045HF HBR2045HFR Halogen Free NO YES NO YES NO YES Device Weight 1.98 g(typ) 1.98 g(typ) 1.70 g(typ) 1.70 g(typ) 1.70 g(typ) 1.70 g(typ) Marking HBR2045 HBR2045 HBR2045 HBR2045 HBR2045 HBR2045 Package TO-220 TO-220 TO-220F TO-220F TO-220HF TO-220HF Packaging Tube Tube Tube Tube Tube Tube (Rev.):201002H 1/7 R HBR2045 ABSOLUTE RATINGS (Tc=25℃) Parameter Repetitive peak reverse voltage Maximum DC blocking voltage Average forward current TC=150℃ (TO-220) TC=125℃ (TO-220F, TO-220HF) per device Symbol VRRM VDC Value 45 45 20 Unit V V IF(AV) per diode 10 A Surge non repetitive forward current ( 8.3ms — JEDEC ) 8.3 ms single half-sine-wave (JEDEC Method) Maximum junction temperature Storage temperature range IFSM 150 A Tj TSTG 175 -40~+150 ℃ ℃ ELECTRICAL CHARACTERISTICS Tests conditions Tj =25℃ Tj =125℃ Tj =25℃ Tj =125℃ VR=VRRM IF=10A 0.63 0.56 20 20 0.7 0.6 Unit μA mA...




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