Green Product
SP8010E
Ver 1.2
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRO...
Green Product
SP8010E
Ver 1.2
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Typ
4.3 @ VGS=10V 24V 26A 4.9 @ VGS=6V 7.0 @ VGS=4V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
D D D
P in 1
5 6 7 8
4 3 2 1
G S S S
D
TSON 3.3 x 3.3
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
c a a c
Limit 24 ±20
Units V V A A W °C
TA=25°C TA=25°C
26 78 1.67 -55 to 150
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
75
°C/W
Details are subject to change without notice.
Mar,24,2014
1
www.samhop.com.tw
SP8010E
Ver 1.2
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions Min 24 10 10 ±10 Typ Max Units OFF CHARACTERISTICS BVDSS BVDSX IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS=0V , ID=10mA VGS=-12V , ID=10mA VDS=24V , VGS=0V
V V uA uA
VGS= ±20V , VDS=0V
ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) Drain-Source On-State Resistance
b
VDS=VGS , ID=0.3mA VGS=10V , ID=13A VGS=6V , ID=13A VGS=4V , ID=13A
1.0
1.4 4.3 4.9 7.0
2.0 5.4 6.6 9.5
V m ohm m ohm m ohm
SWITCHING CHARACTERISTICS tD(ON) T...