Green Product
SP8009
Ver 1.1
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PROD...
Green Product
SP8009
Ver 1.1
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
30V
ID
24A
R DS(ON) (m Ω) Typ
6.0 @ VGS=10V 7.2 @ VGS=6V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package.
P in 1
TSON 3.3 x 3.3
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
a
Limit 30 ±20
Units V V A A W °C
TA=25°C TA=25°C
24 72 1.67 -55 to 150
Maximum Power Dissipation Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
75
°C/W
Details are subject to change without notice.
Jul,18,2013
1
www.samhop.com.tw
SP8009
Ver 1.1
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions Min 30 10 10 ±100 Typ Max Units OFF CHARACTERISTICS BVDSS BVDSX IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS=0V , ID=10mA VGS=-20V , ID=10mA VDS=30V , VGS=0V
V V uA nA
VGS= ±16V , VDS=0V
ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance
b
VDS=VGS , ID=0.2mA VGS=10V , ID=12A VGS=6V , ID=12A
1
1.5 6 7.2
3 7.2 11
V m ohm m ohm pF pF pF
DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS t...