Green Product
SP8009EL
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PR...
Green Product
SP8009EL
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
33V
ID
24A
R DS(ON) (m Ω) Typ
5.0 @ VGS=10V 6.5 @ VGS=6V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
D D D
P in 1
5 6 7 8
4 3 2 1
G S S S
D
TSON 3.3 x 3.3
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range
c
Limit 33 ±20
Units V V A A mJ W °C
TA=25°C
24 72 121
TA=25°C
1.67 -55 to 150
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
75
°C/W
Details are subject to change without notice.
Aug,07,2013
1
www.samhop.com.tw
SP8009EL
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions Min 33 10 10 ±10 Typ Max Units OFF CHARACTERISTICS BVDSS BVDSX IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS=0V , ID=10mA VGS=-20V , ID=10mA VDS=33V , VGS=0V
V V uA uA
VGS= ±20V , VDS=0V
ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance
b
VDS=VGS , ID=0.2mA VGS=10V , ID=12A VGS=6V , ID=12A
1
1.6 5.0 6.5
3 6.5 9.0
V m ohm m ohm pF pF pF
DYNAMIC CHARACTERISTICS Input C...