SP8076E

Green Product SP8076E Ver 1.3 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 33V ID 27A R DS(ON) (m Ω) Typ 3.8 @ VGS=10V 4.9 @ VGS=6V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D D D P in 1 5 6 7 8 4 3 2 1 G S S S D TSON 3.3 x 3.3 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a Limit 33 ±20 Units V V A A W °C TA=25°C TA=25°C 27 81 1.67 -55 to 150 Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 75 °C/W Details are subject to change without notice. Oct,22,2013 1 www.samhop.com.tw SP8076E Ver 1.3 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min 33 18 10 ±10 Typ Max Units OFF CHARACTERISTICS BVDSS BVDSX IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=10mA VGS=-20V , ID=10mA VDS=33V , VGS=0V V V uA uA VGS= ±20V , VDS=0V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) Drain-Source On-State Resistance b VDS=VGS , ID=0.3mA VGS=10V , ID=13.5A VGS=6V , ID=13.5A 1.3 1.8 3.8 4.9 2.3 4.6 6.2 V m ohm m ohm pF pF pF DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COS...