SP8608

Green Product SP8608 Ver 2.3 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 9.5 @ VGS=4.5V 9.8 @ VGS=4.0V 20V 12A 10.5 @ VGS=3.8V 12.5 @ VGS=3.1V 15.0 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D2 D2 D1 5 6 7 8 4 3 2 1 G2 S2 G1 S1 S mini 8 P IN 1 D1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a c c Limit 20 ±12 TA=25°C TA=70°C TA=25°C TA=70°C 12 9.6 72 1.32 0.84 -55 to 150 Units V V A A A W W °C Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 95 °C/W Details are subject to change without notice. Jul,22,2014 1 www.samhop.com.tw SP8608 Ver 2.3 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) VGS=0V , ID=250uA VDS=16V , VGS=0V 20 1 ±1 V uA uA VGS= ±8V , VDS=0V VDS=VGS , ID=1mA VGS=4.5V , ID=3A VGS=4.0V , ID=3A VGS=3.8V , ID=3A VGS=3.1V , ID=3A VGS=2.5V , ID=3A VDS=5V , ID=6A 0.5 6.5 7.0 7.5 8.0 9.5 1.0 8.0 8.5 9.0 10.5 12.0 2...