SP632S

Green Product SP632S Ver 1.1 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 60V ID 10A R DS(ON) (m Ω) Max 16 @ VGS=10V 24 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. PIN 1 5 6 7 8 DFN 5x6 1 2 3 4 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage TC=25°C ID Drain Current-Continuous ad Limit 60 ±20 42 26 10 8 35 c Units V V A A A A A mJ W W W °C TC=100°C TA=25°C TA=70°C IDM EAS PD -Pulsed d Single Pulse Avalanche Energy Maximum Power Dissipation a 156 TC=25°C TA=25°C TA=70°C 54 3.1 2 -55 to 150 TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient R JC Thermal Resistance, Junction-to-Case Details are subject to change without notice. 40 2.3 °C/W °C/W Jan,24,2014 1 www.samhop.com.tw SP632S Ver 1.1 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=250uA VDS=48V , VGS=0V 60 1 ±100 V uA nA VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance b VDS=VGS , ID=250uA VGS=10V , ID=5A VGS=...