SP3903

Green Product SP3903 Ver 1.4 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 30V ID 7.5A R DS(ON) (m Ω) Max 22 @ VGS=10V 32 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D1 D1 D2 D2 PIN1 PDFN 5x6 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID Parameter Drain-Source Voltage Gate-Source Voltage TA=25°C TA=70°C TC=25°C TC=100°C d Limit 30 ±20 7.5 a 6 e 21.5 13.6 e 31 49 a 2.5 a 1.6 20.8 8.3 -55 to 150 a Drain Current-Continuous IDM EAS -Pulsed b Units V V A A A A A mJ W W W W °C Single Pulse Avalanche Energy PD Maximum Power Dissipation TA=25°C TA=70°C TC=25°C TC=100°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient a 6 50 °C/W °C/W Details are subject to change without notice. Jul,18,2013 1 www.samhop.com.tw SP3903 Ver 1.4 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=24V , VGS=0V Min 30 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VGS= ±20V , VDS=0V 1 ±100 uA nA VDS...