SP3906

Green Product SP3906 Ver 1.0 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 35V ID 5A R DS(ON) (m Ω) Max 85 @ VGS=10V 131 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D2 D2 PIN1 5 6 7 8 4 3 2 1 G2 S2 G1 S1 D1 PDFN 5x6 D1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed ac d c TA=25°C TA=70°C Limit 35 ±20 5 4 21 6 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range TA=25°C TA=70°C 2.5 1.6 -55 to 150 THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 50 °C/W Details are subject to change without notice. Sep,11,2014 1 www.samhop.com.tw SP3906 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min 35 1 ±10 Typ Max Units V uA uA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VDS=28V , VGS=0V VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance b VDS=VGS , ID=250uA VGS=10V , ID=2.5A VGS=4.5V , ID=2.0A VDS=10V , ID=2.5A 1 1.9 68 97 7.5 3 85 131 V m ohm ...