Document
Green Product
SP8256
Ver 1.1
S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
8.5 @ VGS=4.5V 9.0 @ VGS=4.0V 20V 11A 9.5 @ VGS=3.7V 10.0 @ VGS=3.1V 11.5 @ VGS=2.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
DF N 2X5
G2
S2
S2
Bottom Drain Contact
D1/D2
G1 S1
3 2 1
4 G2 5 6 S2 S2
G1 S1 S1
S1
(Bottom view)
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
c ac
Limit 20 ±10 TA=25°C TA=70°C TA=25°C TA=70°C 11 8.8 90
a
Units V V A A A W W °C
Maximum Power Dissipation
1.67 1.07 -55 to 150
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA R JC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case 75 5.5 °C/W °C/W
Details are subject to change without notice.
Jan,09,2014
1
www.samhop.com.tw
SP8256
Ver 1.1
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions
VGS=0V , ID=250uA VDS=16V , VGS=0V
Min 20
Typ
Max
Units
OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th)
VGS= ±10V , VDS=0V
1 ±10
V uA uA
VDS=VGS , ID=1.0mA VGS=4.5V , ID=5.5A VGS=4.0V , ID=5.5A VGS=3.7V , ID=5.5A VGS=3.1V , ID=5.5A VGS=2.5V , ID=5.5A
0.5 5.0 5.5 6.0 6.5 7.0
0.74 6.5 7.0 7.5 8.0 9.0 36
1.5 8.5 9.0 9.5 10.0 11.5
V m ohm m ohm m ohm m ohm m ohm S
RDS(ON)
Drain-Source On-State Resistance
gFS
Forward Transconductance
b
VDS=10V , ID=5.5A
DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
b
VDS=10V,VGS=0V f=1.0MHz
873 278 185
pF pF pF
VDD=16V ID=5.5A VGS=4.5V RGEN=6 ohm VDS=16V,ID=11A, VGS=4.5V
30 65 32 69 15.6 2.5 6.7
ns ns ns ns nC nC nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VGS=0V,IS=11A Diode Forward Voltage VSD
0.84
1.2
V
Notes
a.Surface Mounted on FR4 Board of 1 inch2 , 1oz. b.Guaranteed by design, not subject to production testing. c.Drain current limited by maximum junction temperature.
Jan,09,2014
2
www.samhop.com.tw
SP8256
Ver 1.1
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
120
3
dT - Percentage of rated Power - %
PT - Total Power Dissipation - W
100 80 60 40 20 0 0 25 50 75 100 125 150 175
2.5 2 1.5 1 0.5 0 0 25 50 75 100 125 150 175
Mounted on FR-4 board of 1 inch2 , 1oz
TA - Ambient Temperature - °C
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
ID - Drain Current - A
RDS
mit ) Li (ON
10us 100us 1ms
10
1
10ms 1s
0.1
VGS=4.5V Single Pulse TA=25 C
1 10
DC
0.01 0.1
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(ch-A) - Transient Thermal Resistance - °C/W
100
Mounted on FR-4 board of 1 inch2 , 2oz
10
1
Single Pulse
0.1 0.001 0.01 0.1 1
PW - Pulse Width - s
10
100
1000
Jan,09,2014
3
www.samhop.com.tw
SP8256
Ver 1.1
FORWARD TRANSFER CHARACTERISTICS
80
100
VGS = 4.5 V ID - Drain Current - A ID - Drain Current - A
60
4.0 V 3.7 V
10
TA = -25°C 125°C 25°C
40
3.1 V 2.5 V
1
75°C
0.1
20
0
0.01 0 0.2 0.4 0.6 0.8 1 0 0.4 0.8 1.2 1.6 2.0 2.4
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
VGS(off) - Gate to Source Cut-off Voltage - V
GATEBTO SOURE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
0.9
ID = 1.0mA
0.8
ЮyfsЮ- Forward Transfer Admittance - S
100
TA = -25°C
10
25°C
0.7
75°C 125°C
1
0.6
0.5
0.1
0.4 -50
0
50
100
150
0.01 0.01
0.1
1
10
100
Tch - Channel Temperature - °C
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 20
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 40
16
VGS = 2.5 V 3.1 V 3.7 V 4.0 V
ID = 5.5 A
30
12
20
8
4.5 V
4
10
0 0.1 1 10 100
0
0
2
4
6
8
10
12
ID - Drain Current - A
VGS - Gate to Source Voltage - V
Jan,09,2014
4
www.samhop.com.tw
SP8256
Ver 1.1
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 20 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - mΩ
16
12
VGS = 2.5 V 3.1 V 3.7 V 4.0 V 4.5 V
ID = 5.5 A
Ciss, Coss, Crss - Capacitance - pF
1000
Ciss Coss Crss
8
100
4
0
-50
0
50
100
150
10 0.1
1
10
100
Tch - Channel Temperature - °C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT CHARACTERISTICS
td(on), tr, td(off), tf - Switch.