DatasheetsPDF.com

SP8256 Dataheets PDF



Part Number SP8256
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet SP8256 DatasheetSP8256 Datasheet (PDF)

Green Product SP8256 Ver 1.1 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 8.5 @ VGS=4.5V 9.0 @ VGS=4.0V 20V 11A 9.5 @ VGS=3.7V 10.0 @ VGS=3.1V 11.5 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. DF N 2X5 G2 S2 S2 Bottom Drain Contact D1/D2 G1 S1 3 2 1 4 G2 5 6 S2 S2 G1 S1 S1 S1 (Bottom view) ABSOLUTE MAXIMUM RATINGS .

  SP8256   SP8256


Document
Green Product SP8256 Ver 1.1 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 8.5 @ VGS=4.5V 9.0 @ VGS=4.0V 20V 11A 9.5 @ VGS=3.7V 10.0 @ VGS=3.1V 11.5 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. DF N 2X5 G2 S2 S2 Bottom Drain Contact D1/D2 G1 S1 3 2 1 4 G2 5 6 S2 S2 G1 S1 S1 S1 (Bottom view) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed c ac Limit 20 ±10 TA=25°C TA=70°C TA=25°C TA=70°C 11 8.8 90 a Units V V A A A W W °C Maximum Power Dissipation 1.67 1.07 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA R JC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case 75 5.5 °C/W °C/W Details are subject to change without notice. Jan,09,2014 1 www.samhop.com.tw SP8256 Ver 1.1 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=16V , VGS=0V Min 20 Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) VGS= ±10V , VDS=0V 1 ±10 V uA uA VDS=VGS , ID=1.0mA VGS=4.5V , ID=5.5A VGS=4.0V , ID=5.5A VGS=3.7V , ID=5.5A VGS=3.1V , ID=5.5A VGS=2.5V , ID=5.5A 0.5 5.0 5.5 6.0 6.5 7.0 0.74 6.5 7.0 7.5 8.0 9.0 36 1.5 8.5 9.0 9.5 10.0 11.5 V m ohm m ohm m ohm m ohm m ohm S RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance b VDS=10V , ID=5.5A DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge b VDS=10V,VGS=0V f=1.0MHz 873 278 185 pF pF pF VDD=16V ID=5.5A VGS=4.5V RGEN=6 ohm VDS=16V,ID=11A, VGS=4.5V 30 65 32 69 15.6 2.5 6.7 ns ns ns ns nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VGS=0V,IS=11A Diode Forward Voltage VSD 0.84 1.2 V Notes a.Surface Mounted on FR4 Board of 1 inch2 , 1oz. b.Guaranteed by design, not subject to production testing. c.Drain current limited by maximum junction temperature. Jan,09,2014 2 www.samhop.com.tw SP8256 Ver 1.1 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 120 3 dT - Percentage of rated Power - % PT - Total Power Dissipation - W 100 80 60 40 20 0 0 25 50 75 100 125 150 175 2.5 2 1.5 1 0.5 0 0 25 50 75 100 125 150 175 Mounted on FR-4 board of 1 inch2 , 1oz TA - Ambient Temperature - °C TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 ID - Drain Current - A RDS mit ) Li (ON 10us 100us 1ms 10 1 10ms 1s 0.1 VGS=4.5V Single Pulse TA=25 C 1 10 DC 0.01 0.1 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - °C/W 100 Mounted on FR-4 board of 1 inch2 , 2oz 10 1 Single Pulse 0.1 0.001 0.01 0.1 1 PW - Pulse Width - s 10 100 1000 Jan,09,2014 3 www.samhop.com.tw SP8256 Ver 1.1 FORWARD TRANSFER CHARACTERISTICS 80 100 VGS = 4.5 V ID - Drain Current - A ID - Drain Current - A 60 4.0 V 3.7 V 10 TA = -25°C 125°C 25°C 40 3.1 V 2.5 V 1 75°C 0.1 20 0 0.01 0 0.2 0.4 0.6 0.8 1 0 0.4 0.8 1.2 1.6 2.0 2.4 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V VGS(off) - Gate to Source Cut-off Voltage - V GATEBTO SOURE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 0.9 ID = 1.0mA 0.8 ЮyfsЮ- Forward Transfer Admittance - S 100 TA = -25°C 10 25°C 0.7 75°C 125°C 1 0.6 0.5 0.1 0.4 -50 0 50 100 150 0.01 0.01 0.1 1 10 100 Tch - Channel Temperature - °C ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 20 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 40 16 VGS = 2.5 V 3.1 V 3.7 V 4.0 V ID = 5.5 A 30 12 20 8 4.5 V 4 10 0 0.1 1 10 100 0 0 2 4 6 8 10 12 ID - Drain Current - A VGS - Gate to Source Voltage - V Jan,09,2014 4 www.samhop.com.tw SP8256 Ver 1.1 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 20 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ 16 12 VGS = 2.5 V 3.1 V 3.7 V 4.0 V 4.5 V ID = 5.5 A Ciss, Coss, Crss - Capacitance - pF 1000 Ciss Coss Crss 8 100 4 0 -50 0 50 100 150 10 0.1 1 10 100 Tch - Channel Temperature - °C VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT CHARACTERISTICS td(on), tr, td(off), tf - Switch.


SP2112 SP8256 SP2458


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)