SP2458

Green Product SP2458 Ver 1.0 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 10.5 @ VGS=4.5V 11.0 @ VGS=4.0V 24V 9A 11.5 @ VGS=3.7V 13.0 @ VGS=3.1V 17.0 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. DF N 2X5 G2 S2 S2 Bottom Drain Contact D1/D2 G1 S1 3 2 1 4 G2 5 6 S2 S2 G1 S1 S1 S1 (Bottom view) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a TA=25°C TA=70°C TA=25°C TA=70°C Limit 24 ±10 9 7.2 43 1.67 1.07 -55 to 150 Units V V A A A W W °C Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 75 °C/W Details are subject to change without notice. Aug,23,2013 1 www.samhop.com.tw SP2458 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=20V , VGS=0V Min 24 Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) VGS= ±10V , VDS=0V 1 ±10 V uA uA VDS=VGS , ID=1.0mA VGS=4.5V , ID=4.5A VGS=4.0V , ID=4.5A VGS=3.7V , ID=4.5A VGS=3.1V , ID=4.5A VGS=2.5V , ID=4.5A ...