STM4605

Green Product STM4605 Ver 1.0 S a mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -40V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID -6A R DS(ON) (m Ω) Max 39 @ VGS=-10V 58 @ VGS=-4.5V D D 5 6 7 8 4 3 2 1 G S S S S O-8 1 D D ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit -40 ±20 TC=25°C TC=70°C -6 -4.8 -33.5 46 TC=25°C TC=70°C 2.5 1.6 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 50 °C/W Details are subject to change without notice. Jul,27,2010 1 www.samhop.com.tw STM4605 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min -40 -1 ±100 Typ Max Units V uA nA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VGS=0V , ID=-250uA VDS= -32V , VGS=0V VGS= ±20V , VDS=0V VDS=VGS , ID=-250uA VGS=-10V , ID=-6A VGS=-4.5V , ID=-4.9A VDS=-5V , ID=-6A -1 -1.7 31 43 16.5 -3 39 58 V m ohm m ohm S...