Green Product
STM4615
Ver 1.0
S a mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
PRO...
Green Product
STM4615
Ver 1.0
S a mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
-40V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
ID
-12.5A
R DS(ON) (m Ω) Max
10.5 @ VGS=-10V 16 @ VGS=-4.5V
D D
5 6 7 8
4 3 2 1
G S S S
S O-8 1
D D
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b d a
Limit -40 ±20 TA=25°C TA=70°C -12.5 -10 -70.5 46 TA=25°C TA=70°C 2.5 1.6 -55 to 150
Units V V A A A mJ W W °C
Single Pulse Avalanche Energy Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
a
50
°C/W
Details are subject to change without notice.
Aug,02,2010
1
www.samhop.com.tw
STM4615
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions Min -40 -1 ±10 Typ Max Units V uA uA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
c
VGS=0V , ID=-250uA VDS= -32V , VGS=0V
VGS= ±20V , VDS=0V
VDS=VGS , ID=-250uA VGS=-10V , ID=-12.5A VGS=-4.5V , ID=-10A VDS=-10V , ID=-12.5A
-1
-1.7 8.5 12 40
...