STS2305A

Green Product STS2305A Ver 1.1 S a mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -20V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID -3.3A R DS(ON) (m Ω) Max 70 @ VGS=-4.5V 100 @ VGS=-2.5V S OT 23-3L D S G G D S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a TC=25°C TC=70°C TC=25°C TC=70°C Limit -20 ±10 -3.3 -2.6 -12.5 1.25 0.8 -55 to 150 Units V V A A A W W °C Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 100 °C/W Details are subject to change without notice. Jun,02,2010 1 www.samhop.com.tw STS2305A Ver 1.1 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=-250uA VDS=-16V , VGS=0V Min -20 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VGS= ±10V , VDS=0V -1 ±100 uA nA VDS=VGS , ID=-250uA VGS=-4.5V , ID=-3.3A VGS=-2.5V , ID=-2.8A VDS=-5V , ID=-3.3A -0.5 -0.8 55 80 11 -1.5 70 100 V m ohm m ohm S DYNAMIC CHARACTERISTICS Input Capac...