Green Product
STS2305
Ver 1.0
S a mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
PRO...
Green Product
STS2305
Ver 1.0
S a mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
57 @ VGS=-4.5V 78 @ VGS=-4.0V -20V -3.4A 83 @ VGS=-3.7V 93 @ VGS=-3.1V 115 @ VGS=-2.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package.
D
S OT -23
D S G
S
G
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b a
Limit -20 ±12 TA=25°C TA=70°C TA=25°C TA=70°C -3.4 -2.7 -13
a
Units V V A A A W W °C
Maximum Power Dissipation
1.25 0.8 -55 to 150
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
a
100
°C/W
Details are subject to change without notice.
Jan,07,2013
1
www.samhop.com.tw
STS2305
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th)
VGS=0V , ID=-250uA VDS=-16V , VGS=0V
-20 1 ±100
V uA nA
VGS= ±12V , VDS=0V
RDS(ON)
Drain-Source On-State Resistance
VDS=VGS , ID=-1mA VGS=-4.5V , ID=-1.7A VGS=-4.0V , ID=-1.7A VGS=-3.7V , ID=-1.7A VGS=-3.1V , ID=-1.7A VGS=-2.5V , ID=-1.7A VDS=-5V , ID=-1.7A
-0.5 46 48 51 56 68
-0...