STS3415

Gr Pr STS3415 Ver 2.0 S a mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 46 @ VGS=-4.5V 47 @ VGS=-4.0V -20V -4.2A 49 @ VGS=-3.7V 54 @ VGS=-3.1V 61 @ VGS=-2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D S OT -23 D S G S G ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit -20 ±10 TA=25°C TA=70°C TA=25°C TA=70°C -4.2 -3.4 -16 a Units V V A A A W W °C Maximum Power Dissipation 1.25 0.8 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 100 °C/W Details are subject to change without notice. May,22,2012 1 www.samhop.com.tw STS3415 Ver 2.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=-250uA VDS=-16V , VGS=0V Min -20 Typ Max Units V uA uA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) VGS= ±10V , VDS=0V 1 ±10 RDS(ON) Drain-Source On-State Resistance VDS=VGS , ID=-1mA VGS=-4.5V , ID=-2.1A VGS=-4.0V , ID=-2.1A VGS=-3.7V , ID=-2.1A VGS=-3.1V , ID=-2.1A VGS=-2.5V , ID=-2.1A VDS=-5V , ID=-2.1A -0.5 28 29 30 32...