STS3405

Green Product STS3405 Ver 1.1 S a mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -30V ID -3A R DS(ON) (m Ω) Max 100 @ VGS=-10V 150 @ VGS=-4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. SOT-23 package. D S OT-23 D S G G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C ID Drain Current-Continuous a TA=70°C b IDM -Pulsed PD TJ, TSTG Maximum Power Dissipation a Limit -30 ±20 -3 -2.4 -12 1.25 0.8 -55 to 150 Units V V A A A W W °C TA=25°C TA=70°C Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 100 °C/W Details are subject to change without notice. Nov,21,2008 1 www.samhop.com.tw STS3405 Ver 1.1 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=-250uA VDS=-24V , VGS=0V Min -30 Typ Max Units V uA nA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VGS= ±20V , VDS=0V 1 ±100 VDS=VGS , ID=-250uA VGS=-10V , ID=-3A VGS=-4.5V , ID=-2.4A VDS=-5V , ID=-3A -1 -1.5 80 115 8 435 90 60 -3 100 150 V m ohm m ohm S pF pF pF DYNAMIC CHARACTERISTICS Input Capacitance CI...