Document
STGW38IH130D, STGWT38IH130D
33 A - 1300 V - very fast IGBT
Datasheet − production data
Features
■ ■ ■ ■
Low saturation voltage High current capability Low switching loss Low static and peak forward voltage drop freewheeling diode
1 3
1 3 2
2
Applications
■ ■
Induction cooking, microwave ovens Soft-switching applications
TO-247
TO-3P
Description
This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. This device is well-suited for resonant or soft-switching applications. Figure 1. Internal schematic diagram
Table 1.
Device summary
Marking Package TO-247 long leads GW38IH130D TO-247 TO-3P Tube Packaging
Order codes STGW38IH130D STGWS38IH130D STGWT38IH130D
September 2012
This is information on a product in full production.
Doc ID 15697 Rev 4
1/17
www.st.com
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Contents
STGW38IH130D, STGWT38IH130D
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 4 5
Test circuits
............................................... 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
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Doc ID 15697 Rev 4
STGW38IH130D, STGWT38IH130D
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value Parameter TO-3P, TO-247 long leads 1300 63 33 40 125 ±25 250 30 100 –55 to 150 180 55 25 Unit TO-247 V A A A A V W A A °C
VCES IC IC
(1) (1)
Collector-emitter voltage (VGE = 0) Continuous collector current at TC = 25 °C Continuous collector current at TC = 100 °C Turn-off latching current Pulsed collector current Gate-emitter voltage Total dissipation at TC = 25 °C Diode RMS forward current at TC = 25 °C Surge non repetitive forward current tp = 10 ms sinusoidal Operating junction temperature
ICL (2) ICP
(3)
VGE PTOT IF IFSM Tj
1.
Calculated according to the iterative formula:
Tj ( max ) – TC IC ( T C ) = ------------------------------------------------------------------------------------------------------Rthj – c × V CE ( sat ) ( max ) ( T j ( max ), I C ( T C ) )
2. Vclamp = 960 V, Tj =150 °C, RG=10 Ω, VGE=15 V 3. Pulse width limited by maximum permissible junction temperature and turn-off within RBSOA
Table 3.
Symbol
Thermal data
Value Parameter TO-3P, TO-247 long leads 0.5 2 50 Unit TO-247 0.7 2.1 °C/W °C/W °C/W
Rthj-case Rthj-case Rthj-amb
Thermal resistance junction-case IGBT Thermal resistance junction-case diode Thermal resistance junction-ambient
Doc ID 15697 Rev 4
3/17
Electrical characteristics
STGW38IH130D, STGWT38IH130D
2
Electrical characteristics
TJ= 25 °C unless otherwise specified. Table 4.
Symbol
Static
Parameter Test conditions Min. Typ. Max. Unit
Collector-emitter V(BR)CES breakdown voltage (VGE = 0) VCE(sat) VGE(th) ICES IGES gfs (1) VF
IC = 1 mA
1300 2.1 2.0 3.75 2.8 5.75 1 10 ± 100 20 1.3 1.9 1.7
V V V V mA mA nA S V V
Collector-emitter saturation VGE= 15 V, IC= 20 A voltage VGE= 15 V, IC= 20 A, TJ =125 °C Gate threshold voltage Collector-cut-off current (VGE = 0) Gate-emitter leakage current (VCE = 0) Forward transconductance Diode forward voltage VCE= VGE, IC= 1 mA VCE =1300 V VCE =1300 V, TJ=125 °C VGE =± 20 V VCE = 25 V, IC= 20 A IF = 20 A IF = 20 A, TJ = 125 °C
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 5.
Symbol Cies Coes Cres Qg Qge Qgc
Dynamic
Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions Min. Typ. 2900 155 30 127 18 50 Max. Unit pF pF pF nC nC nC
VCE = 25 V, f = 1 MHz, VGE=0
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VCE = 960 V, IC= 20 A,VGE=15 V
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Table 6.
Symbol tr(Voff) td(off) tf tr(Voff) td(off) tf
Inductive load switching times
Parameter Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions VCC = 960 V, IC = 20 A RG= 10 Ω, VGE= 15 V, (see Figure 16) VCC = 960 V, IC = 20 A RG= 10 Ω, VGE= 15 V, TJ= 125 °C (see Figure 16) Min. Typ. 102 284 180 200 424 316 Max. Unit ns ns ns ns ns ns
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Doc ID 15697 Rev 4
STGW38IH130D, STGWT38IH130D
Electrical characteristics
Table 7.
Symbol Eoff (1)
Switching energy (inductive load)
Parameter Test conditions VCC = 960 V, IC = 20 A RG= 10 Ω, VGE= 15 V, (see Figure 16) VCC = 960 V, IC = 20 A RG= 10 Ω, VGE= 15 V, TJ= 125 °C (see Figure 16) Min. Typ. Max. Unit
Turn-off switching losses
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3.4
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mJ
Eoff (1)
Turn-off switching losses
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6.4
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mJ
1. Turn-off losses include also the tail of the collector current
Doc ID 15697 Rev 4
5/17
Electrical characteristics
STGW38IH130D, ST.