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GW38IH130D Dataheets PDF



Part Number GW38IH130D
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description very fast IGBT
Datasheet GW38IH130D DatasheetGW38IH130D Datasheet (PDF)

STGW38IH130D, STGWT38IH130D 33 A - 1300 V - very fast IGBT Datasheet − production data Features ■ ■ ■ ■ Low saturation voltage High current capability Low switching loss Low static and peak forward voltage drop freewheeling diode 1 3 1 3 2 2 Applications ■ ■ Induction cooking, microwave ovens Soft-switching applications TO-247 TO-3P Description This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching .

  GW38IH130D   GW38IH130D


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STGW38IH130D, STGWT38IH130D 33 A - 1300 V - very fast IGBT Datasheet − production data Features ■ ■ ■ ■ Low saturation voltage High current capability Low switching loss Low static and peak forward voltage drop freewheeling diode 1 3 1 3 2 2 Applications ■ ■ Induction cooking, microwave ovens Soft-switching applications TO-247 TO-3P Description This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. This device is well-suited for resonant or soft-switching applications. Figure 1. Internal schematic diagram Table 1. Device summary Marking Package TO-247 long leads GW38IH130D TO-247 TO-3P Tube Packaging Order codes STGW38IH130D STGWS38IH130D STGWT38IH130D September 2012 This is information on a product in full production. Doc ID 15697 Rev 4 1/17 www.st.com 17 Contents STGW38IH130D, STGWT38IH130D Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 Test circuits ............................................... 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 Doc ID 15697 Rev 4 STGW38IH130D, STGWT38IH130D Electrical ratings 1 Electrical ratings Table 2. Symbol Absolute maximum ratings Value Parameter TO-3P, TO-247 long leads 1300 63 33 40 125 ±25 250 30 100 –55 to 150 180 55 25 Unit TO-247 V A A A A V W A A °C VCES IC IC (1) (1) Collector-emitter voltage (VGE = 0) Continuous collector current at TC = 25 °C Continuous collector current at TC = 100 °C Turn-off latching current Pulsed collector current Gate-emitter voltage Total dissipation at TC = 25 °C Diode RMS forward current at TC = 25 °C Surge non repetitive forward current tp = 10 ms sinusoidal Operating junction temperature ICL (2) ICP (3) VGE PTOT IF IFSM Tj 1. Calculated according to the iterative formula: Tj ( max ) – TC IC ( T C ) = ------------------------------------------------------------------------------------------------------Rthj – c × V CE ( sat ) ( max ) ( T j ( max ), I C ( T C ) ) 2. Vclamp = 960 V, Tj =150 °C, RG=10 Ω, VGE=15 V 3. Pulse width limited by maximum permissible junction temperature and turn-off within RBSOA Table 3. Symbol Thermal data Value Parameter TO-3P, TO-247 long leads 0.5 2 50 Unit TO-247 0.7 2.1 °C/W °C/W °C/W Rthj-case Rthj-case Rthj-amb Thermal resistance junction-case IGBT Thermal resistance junction-case diode Thermal resistance junction-ambient Doc ID 15697 Rev 4 3/17 Electrical characteristics STGW38IH130D, STGWT38IH130D 2 Electrical characteristics TJ= 25 °C unless otherwise specified. Table 4. Symbol Static Parameter Test conditions Min. Typ. Max. Unit Collector-emitter V(BR)CES breakdown voltage (VGE = 0) VCE(sat) VGE(th) ICES IGES gfs (1) VF IC = 1 mA 1300 2.1 2.0 3.75 2.8 5.75 1 10 ± 100 20 1.3 1.9 1.7 V V V V mA mA nA S V V Collector-emitter saturation VGE= 15 V, IC= 20 A voltage VGE= 15 V, IC= 20 A, TJ =125 °C Gate threshold voltage Collector-cut-off current (VGE = 0) Gate-emitter leakage current (VCE = 0) Forward transconductance Diode forward voltage VCE= VGE, IC= 1 mA VCE =1300 V VCE =1300 V, TJ=125 °C VGE =± 20 V VCE = 25 V, IC= 20 A IF = 20 A IF = 20 A, TJ = 125 °C 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Table 5. Symbol Cies Coes Cres Qg Qge Qgc Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions Min. Typ. 2900 155 30 127 18 50 Max. Unit pF pF pF nC nC nC VCE = 25 V, f = 1 MHz, VGE=0 - - VCE = 960 V, IC= 20 A,VGE=15 V - - Table 6. Symbol tr(Voff) td(off) tf tr(Voff) td(off) tf Inductive load switching times Parameter Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions VCC = 960 V, IC = 20 A RG= 10 Ω, VGE= 15 V, (see Figure 16) VCC = 960 V, IC = 20 A RG= 10 Ω, VGE= 15 V, TJ= 125 °C (see Figure 16) Min. Typ. 102 284 180 200 424 316 Max. Unit ns ns ns ns ns ns - - - - 4/17 Doc ID 15697 Rev 4 STGW38IH130D, STGWT38IH130D Electrical characteristics Table 7. Symbol Eoff (1) Switching energy (inductive load) Parameter Test conditions VCC = 960 V, IC = 20 A RG= 10 Ω, VGE= 15 V, (see Figure 16) VCC = 960 V, IC = 20 A RG= 10 Ω, VGE= 15 V, TJ= 125 °C (see Figure 16) Min. Typ. Max. Unit Turn-off switching losses - 3.4 - mJ Eoff (1) Turn-off switching losses - 6.4 - mJ 1. Turn-off losses include also the tail of the collector current Doc ID 15697 Rev 4 5/17 Electrical characteristics STGW38IH130D, ST.


AD8479 GW38IH130D STGWT38IH130D


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