STU419S

Green Product STU/D419S Ver 1.0 S a mHop Microelectronics C orp. P-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -40V ID -58A R DS(ON) (m Ω) Max 11.5 @ VGS=10V 16 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G S G D S STU SERIES TO - 252AA( D - PAK ) STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Drain Current-Continuous(Package limited) TC=25°C ID -Continuous(Silicon limited) TC=25°C a -Continuous TA=25°C b IDM -Pulsed EAS PD TJ, TSTG Sigle Pulse Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation a d Limit -40 ±20 -50 -58 -11 -175 224 70 2.5 -55 to 150 Units V V A A A A mJ W W °C TC=25°C TA=25°C Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient a 1.8 50 °C/W °C/W Details are subject to change without notice. Sep,15,2008 1 www.samhop.com.tw STU/D419S Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions VGS=0V , ID=-250uA VDS=-32V , VGS=0V Min -40 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) g...