Document
Green Product
STU/D419S
Ver 1.0
S a mHop Microelectronics C orp.
P-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
-40V
ID
-58A
R DS(ON) (m Ω) Max
11.5 @ VGS=10V 16 @ VGS=4.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
G S
G D
S
STU SERIES TO - 252AA( D - PAK )
STD SERIES TO - 251 ( I - PAK )
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Drain Current-Continuous(Package limited) TC=25°C ID -Continuous(Silicon limited) TC=25°C a -Continuous TA=25°C b IDM -Pulsed EAS PD TJ, TSTG Sigle Pulse Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation
a d
Limit -40 ±20 -50 -58 -11 -175 224 70 2.5 -55 to 150
Units V V A A A A mJ W W °C
TC=25°C TA=25°C
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient
a
1.8 50
°C/W °C/W
Details are subject to change without notice.
Sep,15,2008
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STU/D419S
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
4 Symbol
Parameter
Conditions
VGS=0V , ID=-250uA VDS=-32V , VGS=0V
Min -40
Typ
Max
Units V
OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
c
VGS= ±20V , VDS=0V
1 ±10
uA uA
VDS=VGS , ID=-250uA VGS=-10V , ID=-20A VGS=-4.5V , ID=-17A VDS=-10V , ID=-20A
-1
-1.5 9.6 12.5 9
-3 11.5 16
V m ohm m ohm S
DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge
c
VDS=-20V,VGS=0V f=1.0MHz
3550 710 420 40 70 345 125 87 42 9 20
pF pF pF
VDD=-20V ID=-1.0A VGS=-10V RGEN=3.3 ohm VDS=-20V,ID=-20A,VGS=-10V VDS=-20V,ID=-20A,VGS=-4.5V VDS=-20V,ID=-20A, VGS=-10V
ns ns ns ns nC nC nC nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Is Maximum Continuous Drain-Source Forward Current VSD Diode Forward Voltage
b
-2.0 -0.77 -1.3
A V
VGS=0V,IS= -2.0A
Notes
_ 10sec. a.Surface Mounted on FR4 Board,t < _ 300us, Duty Cycle < _ 2%. b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=1.25mH,VDD = 30V .(See Figure13)
Sep,15,2008
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STU/D419S
Ver 1.0
25 V G S =-10V 20
-ID, Drain Current(A)
V G S =-4.5V
-I D, Drain Current(A)
20
15
15 V G S =-2.5V 10 V G S =-2V 5
10
5 -55 C 1 0 T j=125 C 25 C 1.5 2.0 2.5 3.0
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1.0
-V DS, Drain-to-Source Voltage(V)
-V GS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
24 20
Figure 2. Transfer Characteristics
1.8
R DS(on), On-Resistance Normalized
1.6
V G S =-10V I D =-20A V G S =-4V I D =-17A
RDS(on)(m Ω)
16 V G S =4.5V 12 8 4 0 1 5 10 15 20 25 V G S =10V
1.4
1.2
1.0 0.8 0 25 50 75 100 125 150
T j( C )
-I D, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current and Gate Voltage
1.6
Figure 4. On-Resistance Variation with Drain Current and Temperature
BVDSS, Normalized Drain-Source Breakdown Voltage
1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 I D =-250uA
Vth, Normalized Gate-Source Threshold Voltage
1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75
V DS =V G S I D =-250uA
100 125 150
Tj, Junction Temperature(° C )
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation with Temperature
Figure 6. Breakdown Voltage Variation with Temperature
Sep,15,2008
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STU/D419S
Ver 1.0
30 25 75 C
20.0
Is, Source-drain current(A)
125 C
I D =-20A
125 C
15.0 10.0 5.0
25 C
RDS(on)(m Ω)
20 25 C 15 10 5 0
75 C
0
2
4
6
8
10
1.0 0
0.4
0.8
1.2
1.6
2.0
V GS, Gate-to-Source Voltage(V)
VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs. Gate-Source Voltage
4800
Figure 8. Body Diode Forward Voltage Variation with Source Current
10
V GS, Gate to Source Voltage(V)
4000
C, Capacitance(pF)
C is s
8 6 4 2 0
V DS =-20V I D =-20A
3200 2400 1600 C os s 800 C rs s 0 0 5 10 15 20 25 30
0 12.5 25 37.5 50 62.5 75 87.5 100
Qg, Total Gate Charge(nC)
V DS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Figure 10. Gate Charge
6000
500 100
I D, Drain Current(A)
T D(off)
Switching Time(ns)
1000 600 100
R
D
ON S(
)L
im
it
1m s
10
0u
s
Tf Tr
10
10 m DC s
T D(on)
10 1 3 6 10
VDS=-20V,ID=-1A VGS=-10V
1 0.1
V G S =-10V S ingle P ulse T A =25 C 1 10 40 100
60 100 300 600
Rg, Gate Resistance(Ω)
V DS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
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