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STD419S Dataheets PDF



Part Number STD419S
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description P-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet STD419S DatasheetSTD419S Datasheet (PDF)

Green Product STU/D419S Ver 1.0 S a mHop Microelectronics C orp. P-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -40V ID -58A R DS(ON) (m Ω) Max 11.5 @ VGS=10V 16 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G S G D S STU SERIES TO - 252AA( D - PAK ) STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS Drain.

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Green Product STU/D419S Ver 1.0 S a mHop Microelectronics C orp. P-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -40V ID -58A R DS(ON) (m Ω) Max 11.5 @ VGS=10V 16 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G S G D S STU SERIES TO - 252AA( D - PAK ) STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Drain Current-Continuous(Package limited) TC=25°C ID -Continuous(Silicon limited) TC=25°C a -Continuous TA=25°C b IDM -Pulsed EAS PD TJ, TSTG Sigle Pulse Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation a d Limit -40 ±20 -50 -58 -11 -175 224 70 2.5 -55 to 150 Units V V A A A A mJ W W °C TC=25°C TA=25°C Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient a 1.8 50 °C/W °C/W Details are subject to change without notice. Sep,15,2008 1 www.samhop.com.tw STU/D419S Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions VGS=0V , ID=-250uA VDS=-32V , VGS=0V Min -40 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VGS= ±20V , VDS=0V 1 ±10 uA uA VDS=VGS , ID=-250uA VGS=-10V , ID=-20A VGS=-4.5V , ID=-17A VDS=-10V , ID=-20A -1 -1.5 9.6 12.5 9 -3 11.5 16 V m ohm m ohm S DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=-20V,VGS=0V f=1.0MHz 3550 710 420 40 70 345 125 87 42 9 20 pF pF pF VDD=-20V ID=-1.0A VGS=-10V RGEN=3.3 ohm VDS=-20V,ID=-20A,VGS=-10V VDS=-20V,ID=-20A,VGS=-4.5V VDS=-20V,ID=-20A, VGS=-10V ns ns ns ns nC nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Is Maximum Continuous Drain-Source Forward Current VSD Diode Forward Voltage b -2.0 -0.77 -1.3 A V VGS=0V,IS= -2.0A Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 300us, Duty Cycle < _ 2%. b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=1.25mH,VDD = 30V .(See Figure13) Sep,15,2008 2 www.samhop.com.tw STU/D419S Ver 1.0 25 V G S =-10V 20 -ID, Drain Current(A) V G S =-4.5V -I D, Drain Current(A) 20 15 15 V G S =-2.5V 10 V G S =-2V 5 10 5 -55 C 1 0 T j=125 C 25 C 1.5 2.0 2.5 3.0 0 0 0.5 1 1.5 2 2.5 3 0 0.5 1.0 -V DS, Drain-to-Source Voltage(V) -V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 24 20 Figure 2. Transfer Characteristics 1.8 R DS(on), On-Resistance Normalized 1.6 V G S =-10V I D =-20A V G S =-4V I D =-17A RDS(on)(m Ω) 16 V G S =4.5V 12 8 4 0 1 5 10 15 20 25 V G S =10V 1.4 1.2 1.0 0.8 0 25 50 75 100 125 150 T j( C ) -I D, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.6 Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 I D =-250uA Vth, Normalized Gate-Source Threshold Voltage 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 V DS =V G S I D =-250uA 100 125 150 Tj, Junction Temperature(° C ) Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Sep,15,2008 3 www.samhop.com.tw STU/D419S Ver 1.0 30 25 75 C 20.0 Is, Source-drain current(A) 125 C I D =-20A 125 C 15.0 10.0 5.0 25 C RDS(on)(m Ω) 20 25 C 15 10 5 0 75 C 0 2 4 6 8 10 1.0 0 0.4 0.8 1.2 1.6 2.0 V GS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 4800 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 V GS, Gate to Source Voltage(V) 4000 C, Capacitance(pF) C is s 8 6 4 2 0 V DS =-20V I D =-20A 3200 2400 1600 C os s 800 C rs s 0 0 5 10 15 20 25 30 0 12.5 25 37.5 50 62.5 75 87.5 100 Qg, Total Gate Charge(nC) V DS, Drain-to-Source Voltage(V) Figure 9. Capacitance Figure 10. Gate Charge 6000 500 100 I D, Drain Current(A) T D(off) Switching Time(ns) 1000 600 100 R D ON S( )L im it 1m s 10 0u s Tf Tr 10 10 m DC s T D(on) 10 1 3 6 10 VDS=-20V,ID=-1A VGS=-10V 1 0.1 V G S =-10V S ingle P ulse T A =25 C 1 10 40 100 60 100 300 600 Rg, Gate Resistance(Ω) V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Sep,15,2008 4 www.


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