STF443

Green Product STF443 Ver 1.0 S a mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 47 @ VGS=-4.5V 48 @ VGS=-4.0V -20V -4.5A 50 @ VGS=-3.7V 56 @ VGS=-3.1V 64 @ VGS=-2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D P IN 1 D D G G D D S T DF N 2X2 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a d Limit -20 ±10 TA=25°C TA=70°C TA=25°C TA=70°C -4.5 -3.6 -23 a Units V V A A A W W °C Maximum Power Dissipation 1.67 1.07 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 75 °C/W Details are subject to change without notice. Apr,26,2013 1 www.samhop.com.tw STF443 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min -20 -1 ±10 Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) VGS=0V , ID=-250uA VDS=-16V , VGS=0V V uA uA VGS= ±10V , VDS=0V VDS=VGS , ID=-1.0mA VGS=-4.5V , ID=-2.25A VGS=-4.0V , ID=-2.25A VGS=-3.7V , ID=-2.25A VGS=-3.1V , ID=-2.25A VGS=-2.5V , ID=-2.25A VDS=-5V , ID=-2.25A -0.5 27 28 29 32 36 -0.75 36 37...