STM8456
S a mHop Microelectronics C orp.
Ver 1.0
Dual Enhancement Mode Field Effect Transistor ( N and P Channel )
PRO...
STM8456
S a mHop Microelectronics C orp.
Ver 1.0
Dual Enhancement Mode Field Effect
Transistor ( N and P Channel )
PRODUCT SUMMARY (N-Channel)
V DSS
40V
PRODUCT SUMMARY (P-Channel)
V DSS
-40V
ID
6.2A
R DS(ON) (m Ω) Max
33 @ VGS=10V
ID
-5.3A
R DS(ON) (m Ω) Max
45 @ VGS=-10V 70 @ VGS=-4.5V
45 @ VGS=4.5V
D2 D2
5 6 7 8
4 3 2 1
G2 S2 G1 S1
S O-8 1
D1 D1
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage
a
N-Channel 40 ±20 TA=25°C TA=70°C
d
P-Channel -40 ±20 -5.3 -4.2 -22 16 2 1.28
Units V V A A A mJ W °C
Drain Current-Continuous -Pulsed
b
6.2 4.9 25 9
Single Pulse Avalanche Energy Maximum Power Dissipation
a
TA=25°C TA=70°C
Operating Junction and Storage Temperature Range
-55 to 150
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
a
62.5
°C/W
Details are subject to change without notice.
May,29,2008
1
www.samhop.com.tw
STM8456
Ver 1.0
N-Channel ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
4 Symbol
Parameter
Conditions
VGS=0V , ID=250uA VDS=32V , VGS=0V
Min
Typ
Max
Units V
OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
c a
40 1 ±100
uA nA
VGS= ±20V , VDS=0V
VDS=VGS , ID=250uA VGS=10V , ID=6.2A VGS=4.5V , I...