STM8457

Green Product STM8457 Dec.21,2009 Ver1.1 SamHop Microelectronics Corp. Dual Enhancement Mode Field Effect Transistor ( N and P Channel) PRODUCT SUMMARY VDSS 40V (N-Channel) Max PRODUCT SUMMARY VDSS -40V (P-Channel) Max ID 6A RDS(ON) ( m Ω ) ID -5A RDS(ON) ( m Ω ) 26 @ VGS = 10V 33 @ VGS = 4.5V D1 8 42 @ VGS = -10V 62 @ VGS = -4.5V D1 7 D2 6 D2 5 SO-8 1 1 2 3 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @Ta -Pulsed b a Symbol VDS VGS 25 C 70 C ID IDM a N-Channel P-Channel 40 20 6 5.1 28 1.7 2 -40 20 -5 -4.2 -20 -1.7 Unit V V A A A A Drain-Source Diode Forward Current Maximum Power Dissipation Operating Junction and Storage Temperature Range a IS Ta= 25 C PD Ta=70 C TJ, TSTG 1.44 -55 to 150 W C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a R JA 1 62.5 C /W STM8457 N-ChannelELECTRICALCHARACTERISTICS (TA=25Cunlessotherwisenoted) Parameter 5 Symbol BVDSS IDSS IGSS b Condition VGS = 0V, ID = 250uA VDS = 32V, VGS = 0V VGS 20V, VDS = 0V VDS = VGS, ID = 250uA VGS =10V, ID =5A VGS = 4.5V, ID = 4A VDS = 5V, VGS = 10V VDS = 5V, ID = 5A Min Typ C Max Unit 40 1 10 1.4 1.8 20 27 20 15 750 125 75 3.0 26 33 V uA uA V m ohm m ohm OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) ID(ON) gFS c Drain-Source On-State Resistance On-...