STS2620A

STS2620A S a mHop Microelectronics C orp. Ver1.2 Dual Enhancement Mode Field Effect Transistor (N and P Channel ) PRODUCT SUMMARY (N-Channel) V DSS 20V PRODUCT SUMMARY (P-Channel) V DSS -20V ID 2.5A R DS(ON) (m Ω) Max 50 @ VGS=4.5V ID -2A R DS(ON) (m Ω) Max 106 @ VGS=-4.5V 198 @ VGS=-2.5V 76 @ VGS=2.5V SOT 26 Top View D1 D2 G1 S2 G2 1 2 3 6 5 4 D1 S1 D2 G1 G2 S1 Nch S2 P ch ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter N-Channel P-Channel VDS Drain-Source Voltage 20 -20 VGS Gate-Source Voltage ±10 ±10 TC=25°C 2.5 -2 a ID Drain Current-Continuous TC=70°C 2 -1.6 b IDM 8 -7 -Pulsed PD TJ, TSTG Maximum Power Dissipation a Units V V A A A W W °C TC=25°C TC=70°C 1 0.64 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 125 °C/W Details are subject to change without notice. Nov,24,2010 1 www.samhop.com.tw STS2620A Ver1.2 N-Channel ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions VGS=0V , ID=250uA VDS=16V , VGS=0V Min 20 Typ Max Units V uA nA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VGS= ±10V , VDS=0V 1 ±100 VDS=VGS , ID=250uA VGS=4.5V , ID=2.5A VGS=2.5V , ID=2A VDS=5V , ID=2.5A 0....