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STU612D Dataheets PDF



Part Number STU612D
Manufacturers SamHop
Logo SamHop
Description Dual Enhancement Mode Field Effect Transistor
Datasheet STU612D DatasheetSTU612D Datasheet (PDF)

Green Product STU612D Ver 1.0 S a mHop Microelectronics C orp. Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRODUCT SUMMARY (N-Channel) V DSS 60V PRODUCT SUMMARY (P-Channel) V DSS -60V ID 8.6A R DS(ON) (m Ω) Max 76 @ VGS=10V ID -7.3A R DS(ON) (m Ω) Max 110 @ VGS=-10V 145 @ VGS=-4.5V 90 @ VGS=4.5V D1/D2 G1 D1 D2 G2 S1 G1 S2 G2 TO-252-4L S1 N-ch S2 P -ch ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Paramet.

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Green Product STU612D Ver 1.0 S a mHop Microelectronics C orp. Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRODUCT SUMMARY (N-Channel) V DSS 60V PRODUCT SUMMARY (P-Channel) V DSS -60V ID 8.6A R DS(ON) (m Ω) Max 76 @ VGS=10V ID -7.3A R DS(ON) (m Ω) Max 110 @ VGS=-10V 145 @ VGS=-4.5V 90 @ VGS=4.5V D1/D2 G1 D1 D2 G2 S1 G1 S2 G2 TO-252-4L S1 N-ch S2 P -ch ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a TC=25°C TC=70°C N-Channel P-Channel 60 -60 ±20 ±20 8.6 -7.3 6.9 25 20 -5.8 -21 30 10.5 6.7 -55 to 150 Units V V A A A mJ W W °C Sigle Pulse Avalanche Energy Maximum Power Dissipation a TC=25°C TC=70°C Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS a R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient a 12 60 °C/W °C/W Details are subject to change without notice. Mar,05,2009 1 www.samhop.com.tw STU612D Ver 1.0 N-Channel ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions VGS=0V , ID=250uA VDS=48V , VGS=0V Min 60 Typ Max Units V uA nA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VGS= ±20V , VDS=0V 1 ±100 1.6 60 70 21 VDS=VGS , ID=250uA VGS=10V , ID=8.6A VGS=4.5V , ID=8A VDS=5V , ID=8.6A 1.0 3 76 90 V m ohm m ohm S pF pF pF ns ns ns ns nC nC nC nC DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=30V,VGS=0V f=1.0MHz 850 48 40 11.5 11.7 37 7 17 8.3 1.7 4.7 2.0 1.2 VDD=30V ID=1A VGS=10V RGEN=3.3 ohm VDS=30V,ID=8.6A,VGS=10V VDS=30V,ID=8.6A,VGS=4.5V VDS=30V,ID=8.6A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS VSD VGS=0V,IS=2A Diode Forward Voltage b A V 0.81 Mar,05,2009 2 www.samhop.com.tw STU612D Ver 1.0 P-Channel ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VGS=0V , ID=-250uA VDS=-48V , VGS=0V -60 -1 ±100 V uA nA VGS= ±20V , VDS=0V VDS=VGS , ID=-250uA VGS=-10V , ID=-7.3A VGS=-4.5V , ID=-6.3A VDS=-10V , ID=-7.3A -1.0 -1.7 88 110 12 -3 110 145 V m ohm m ohm S DYNAMIC CHARACTERISTICS CISS COSS CRSS Input Capacitance Output Capacitance Reverse Transfer Capacitance c VDS=-30V,VGS=0V f=1.0MHz 740 64 38 12.5 12 65 12 13.5 6 1.6 3.6 pF pF pF ns ns ns ns nC nC nC nC SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=-30V ID=-1A VGS=-10V RGEN=6 ohm VDS=-30V,ID=-7.3A,VGS=-10V VDS=-30V,ID=-7.3A,VGS=-4.5V VDS=-30V,ID=-7.3A, VGS=-10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS VSD Diode Forward Voltage b VGS=0V,IS=-1.6A -0.8 -1.6 -1.2 A V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 30V,VGS=10V.(See Figure13) Mar,05,2009 3 www.samhop.com.tw STU612D Ver 1.0 N-Channel 20 V G S =10V V G S =4V 10 ID, Drain Current(A) V G S =5V V G S =3.5V 12 ID, Drain Current(A) 16 8 6 T j =125 C -55 C 8 V G S =3V 4 25 C 2 0 4 0 0 0.5 1 1.5 2 2.5 3 0 0.8 1.6 2.4 3.2 4.0 4.8 V DS, Drain-to-Source Voltage(V) VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 120 100 Figure 2. Transfer Characteristics 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 25 50 75 100 125 V G S =4.5V I D =8A V G S =10V I D =8.6A R DS(on)(m Ω) 80 60 V G S =4.5V V G S =10V 40 20 0 1 4 8 12 16 20 R DS(on), On-Resistance Normalized I D, Drain Current(A) Tj, Junction Temperature(° C ) 150 T j ( °C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.2 Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 Vth, Normalized Gate-Source Threshold Voltage 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 V DS =V G S I D =250uA 100 125 150 75 100 125 150 Tj, Junction Temperature( ° C ) Tj, Junction Temperature(° C ).


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