Document
Green Product
STU612D
Ver 1.0
S a mHop Microelectronics C orp.
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
PRODUCT SUMMARY (N-Channel)
V DSS
60V
PRODUCT SUMMARY (P-Channel)
V DSS
-60V
ID
8.6A
R DS(ON) (m Ω) Max
76 @ VGS=10V
ID
-7.3A
R DS(ON) (m Ω) Max
110 @ VGS=-10V 145 @ VGS=-4.5V
90 @ VGS=4.5V
D1/D2
G1
D1
D2
G2
S1
G1 S2 G2 TO-252-4L
S1
N-ch
S2
P -ch
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b d a
TC=25°C TC=70°C
N-Channel P-Channel 60 -60 ±20 ±20 8.6 -7.3 6.9 25 20 -5.8 -21 30 10.5 6.7 -55 to 150
Units V V A A A mJ W W °C
Sigle Pulse Avalanche Energy Maximum Power Dissipation
a
TC=25°C TC=70°C
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS a R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient
a
12 60
°C/W °C/W
Details are subject to change without notice.
Mar,05,2009
1
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STU612D
Ver 1.0
N-Channel ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
4 Symbol
Parameter
Conditions
VGS=0V , ID=250uA VDS=48V , VGS=0V
Min 60
Typ
Max
Units V uA nA
OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
c
VGS= ±20V , VDS=0V
1 ±100 1.6 60 70 21
VDS=VGS , ID=250uA VGS=10V , ID=8.6A VGS=4.5V , ID=8A VDS=5V , ID=8.6A
1.0
3 76 90
V m ohm m ohm S pF pF pF ns ns ns ns nC nC nC nC
DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge
c
VDS=30V,VGS=0V f=1.0MHz
850 48 40 11.5 11.7 37 7 17 8.3 1.7 4.7 2.0 1.2
VDD=30V ID=1A VGS=10V RGEN=3.3 ohm VDS=30V,ID=8.6A,VGS=10V VDS=30V,ID=8.6A,VGS=4.5V VDS=30V,ID=8.6A, VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS VSD VGS=0V,IS=2A Diode Forward Voltage b
A V
0.81
Mar,05,2009
2
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STU612D
Ver 1.0
P-Channel ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
4 Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
c
VGS=0V , ID=-250uA VDS=-48V , VGS=0V
-60 -1 ±100
V uA nA
VGS= ±20V , VDS=0V
VDS=VGS , ID=-250uA VGS=-10V , ID=-7.3A VGS=-4.5V , ID=-6.3A VDS=-10V , ID=-7.3A
-1.0
-1.7 88 110 12
-3 110 145
V m ohm m ohm S
DYNAMIC CHARACTERISTICS CISS COSS CRSS
Input Capacitance Output Capacitance Reverse Transfer Capacitance
c
VDS=-30V,VGS=0V f=1.0MHz
740 64 38 12.5 12 65 12 13.5 6 1.6 3.6
pF pF pF ns ns ns ns nC nC nC nC
SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD=-30V ID=-1A VGS=-10V RGEN=6 ohm VDS=-30V,ID=-7.3A,VGS=-10V VDS=-30V,ID=-7.3A,VGS=-4.5V VDS=-30V,ID=-7.3A, VGS=-10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS VSD Diode Forward Voltage
b
VGS=0V,IS=-1.6A
-0.8
-1.6 -1.2
A V
Notes
_ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 30V,VGS=10V.(See Figure13)
Mar,05,2009
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STU612D
Ver 1.0
N-Channel
20
V G S =10V
V G S =4V
10
ID, Drain Current(A)
V G S =5V
V G S =3.5V
12
ID, Drain Current(A)
16
8
6
T j =125 C
-55 C
8
V G S =3V
4 25 C 2 0
4 0 0 0.5 1 1.5 2 2.5 3
0
0.8
1.6
2.4
3.2
4.0
4.8
V DS, Drain-to-Source Voltage(V)
VGS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
120 100
Figure 2. Transfer Characteristics
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 25 50 75 100 125
V G S =4.5V I D =8A V G S =10V I D =8.6A
R DS(on)(m Ω)
80 60
V G S =4.5V
V G S =10V 40 20 0
1
4
8
12
16
20
R DS(on), On-Resistance Normalized
I D, Drain Current(A)
Tj, Junction Temperature(° C )
150 T j ( °C )
Figure 3. On-Resistance vs. Drain Current and Gate Voltage
1.2
Figure 4. On-Resistance Variation with Drain Current and Temperature
BVDSS, Normalized Drain-Source Breakdown Voltage
1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50
Vth, Normalized Gate-Source Threshold Voltage
1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75
V DS =V G S I D =250uA
100 125 150
75
100 125 150
Tj, Junction Temperature( ° C )
Tj, Junction Temperature(° C ).