Document
Green Product
STU411D
Ver 1.1
S a mHop Microelectronics C orp.
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
PRODUCT SUMMARY (N-Channel)
V DSS
40V
PRODUCT SUMMARY (P-Channel)
V DSS
-40V
ID
15A
R DS(ON) (m Ω) Max
32 @ VGS=10V
ID
-12A
R DS(ON) (m Ω) Max
48 @ VGS=-10V 68 @ VGS=-4.5V
42 @ VGS=4.5V
D1/D2
G1
D1
D2
G2
S1
G1 S2 G2 TO-252-4L
S1
N-ch
S2
P -ch
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b d a
TC=25°C TC=70°C
N-Channel P-Channel 40 -40 ±20 ±20 15 -12 12 43 8 -10 -36 15 11 6.7 -55 to 175
Units V V A A A mJ W W °C
Sigle Pulse Avalanche Energy Maximum Power Dissipation
a
TC=25°C TC=70°C
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS a R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient
a
12 60
°C/W °C/W
Details are subject to change without notice.
Aug,27,2009
1
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STU411D
Ver 1.1
N-Channel ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
4 Symbol
Parameter
Conditions
VGS=0V , ID=250uA VDS=32V , VGS=0V
Min 40
Typ
Max
Units V uA uA
OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
c
VGS= ±20V , VDS=0V
1 ±10
VDS=VGS , ID=250uA VGS=10V , ID=15A VGS=4.5V , ID=13A VDS=5V , ID=15A
1.5
1.8 25 32 17
3 32 42
V m ohm m ohm S
DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge
c
VDS=20V,VGS=0V f=1.0MHz
623 95 56
pF pF pF ns ns ns ns nC nC nC nC 2.2
VDD=20V ID=1A VGS=10V RGEN=3.3 ohm VDS=20V,ID=15A,VGS=10V VDS=20V,ID=15A,VGS=4.5V VDS=20V,ID=15A, VGS=10V
10.5 10.6 39 9.6 9.5 4.5 1.6 2.3
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS VSD Diode Forward Voltage
b
A V
VGS=0V,IS=2.2A
0.78
1.2
Aug,27,2009
2
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STU411D
Ver 1.1
P-Channel ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
4 Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
c
VGS=0V , ID=-250uA VDS=-32V , VGS=0V
-40 -1 ±10
V uA uA
VGS= ±20V , VDS=0V
VDS=VGS , ID=-250uA VGS=-10V , ID=-12A VGS=-4.5V , ID=-10A VDS=-5V , ID=-12A
-1.25
-1.6 38 52 9
-3 48 68
V m ohm m ohm S
DYNAMIC CHARACTERISTICS CISS COSS CRSS
Input Capacitance Output Capacitance Reverse Transfer Capacitance
c
VDS=-20V,VGS=0V f=1.0MHz
895 138 67
pF pF pF
SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD=-20V ID=-1A VGS=-10V RGEN=3 ohm VDS=-20V,ID=-12A,VGS=-10V VDS=-20V,ID=-12A,VGS=-4.5V VDS=-20V,ID=-12A, VGS=-10V
14 14 54 10 14.5 7 2.1 3.4
ns ns ns ns nC nC nC nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS VSD Diode Forward Voltage
b
VGS=0V,IS=-2.0A
-0.77
-2.0 -1.2
A V
Notes
_ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 20V,VGS=10V.(See Figure13)
Aug,27,2009
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STU411D
Ver 1.1
N-Channel
40
V G S =10V V G S =4.5V V G S =4V
20
ID, Drain Current(A)
V G S =3.5V
24
ID, Drain Current(A)
32
16
12
T j =125 C
-55 C 8 4 0 25 C
16
V G S =3V
8 0
V G S =2.5V
0
0.5
1
1.5
2
2.5
3
0
0.8
1.6
2.4
3.2
4.0
4.8
V DS, Drain-to-Source Voltage(V)
VGS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
72
Figure 2. Transfer Characteristics
1.5
RDS(on), On-Resistance Normalized
60
1.4 1.3 1.2 1.1 1.0 0.0
V G S =4.5V I D =13A
R DS(on)(m Ω)
48 V G S =4.5V 36 24 V G S =10V 12 0
V G S =10V I D =15A
1
8
16
24
32
40
0
25
50
75
100
125
150
T j ( °C )
I D, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current and Gate Voltage
1.2
Figure 4. On-Resistance Variation with Drain Current and Temperature
BVDSS, Normalized Drain-Source Breakdown Voltage
1.15
Vth, Normalized Gate-Source Threshold Voltage
1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75
V DS =V G S I D =250uA
ID=250uA
1.10 1.05 1.00 0.95 0.90 0.85 -50
100 125 150
-25
0
25
50
75
100 125 150
Tj, Junction Temperature( ° C )
Tj, Junction.