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STU411D Dataheets PDF



Part Number STU411D
Manufacturers SamHop
Logo SamHop
Description Dual Enhancement Mode Field Effect Transistor
Datasheet STU411D DatasheetSTU411D Datasheet (PDF)

Green Product STU411D Ver 1.1 S a mHop Microelectronics C orp. Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRODUCT SUMMARY (N-Channel) V DSS 40V PRODUCT SUMMARY (P-Channel) V DSS -40V ID 15A R DS(ON) (m Ω) Max 32 @ VGS=10V ID -12A R DS(ON) (m Ω) Max 48 @ VGS=-10V 68 @ VGS=-4.5V 42 @ VGS=4.5V D1/D2 G1 D1 D2 G2 S1 G1 S2 G2 TO-252-4L S1 N-ch S2 P -ch ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter D.

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Green Product STU411D Ver 1.1 S a mHop Microelectronics C orp. Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRODUCT SUMMARY (N-Channel) V DSS 40V PRODUCT SUMMARY (P-Channel) V DSS -40V ID 15A R DS(ON) (m Ω) Max 32 @ VGS=10V ID -12A R DS(ON) (m Ω) Max 48 @ VGS=-10V 68 @ VGS=-4.5V 42 @ VGS=4.5V D1/D2 G1 D1 D2 G2 S1 G1 S2 G2 TO-252-4L S1 N-ch S2 P -ch ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a TC=25°C TC=70°C N-Channel P-Channel 40 -40 ±20 ±20 15 -12 12 43 8 -10 -36 15 11 6.7 -55 to 175 Units V V A A A mJ W W °C Sigle Pulse Avalanche Energy Maximum Power Dissipation a TC=25°C TC=70°C Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS a R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient a 12 60 °C/W °C/W Details are subject to change without notice. Aug,27,2009 1 www.samhop.com.tw STU411D Ver 1.1 N-Channel ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions VGS=0V , ID=250uA VDS=32V , VGS=0V Min 40 Typ Max Units V uA uA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VGS= ±20V , VDS=0V 1 ±10 VDS=VGS , ID=250uA VGS=10V , ID=15A VGS=4.5V , ID=13A VDS=5V , ID=15A 1.5 1.8 25 32 17 3 32 42 V m ohm m ohm S DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=20V,VGS=0V f=1.0MHz 623 95 56 pF pF pF ns ns ns ns nC nC nC nC 2.2 VDD=20V ID=1A VGS=10V RGEN=3.3 ohm VDS=20V,ID=15A,VGS=10V VDS=20V,ID=15A,VGS=4.5V VDS=20V,ID=15A, VGS=10V 10.5 10.6 39 9.6 9.5 4.5 1.6 2.3 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS VSD Diode Forward Voltage b A V VGS=0V,IS=2.2A 0.78 1.2 Aug,27,2009 2 www.samhop.com.tw STU411D Ver 1.1 P-Channel ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VGS=0V , ID=-250uA VDS=-32V , VGS=0V -40 -1 ±10 V uA uA VGS= ±20V , VDS=0V VDS=VGS , ID=-250uA VGS=-10V , ID=-12A VGS=-4.5V , ID=-10A VDS=-5V , ID=-12A -1.25 -1.6 38 52 9 -3 48 68 V m ohm m ohm S DYNAMIC CHARACTERISTICS CISS COSS CRSS Input Capacitance Output Capacitance Reverse Transfer Capacitance c VDS=-20V,VGS=0V f=1.0MHz 895 138 67 pF pF pF SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=-20V ID=-1A VGS=-10V RGEN=3 ohm VDS=-20V,ID=-12A,VGS=-10V VDS=-20V,ID=-12A,VGS=-4.5V VDS=-20V,ID=-12A, VGS=-10V 14 14 54 10 14.5 7 2.1 3.4 ns ns ns ns nC nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS VSD Diode Forward Voltage b VGS=0V,IS=-2.0A -0.77 -2.0 -1.2 A V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 20V,VGS=10V.(See Figure13) Aug,27,2009 3 www.samhop.com.tw STU411D Ver 1.1 N-Channel 40 V G S =10V V G S =4.5V V G S =4V 20 ID, Drain Current(A) V G S =3.5V 24 ID, Drain Current(A) 32 16 12 T j =125 C -55 C 8 4 0 25 C 16 V G S =3V 8 0 V G S =2.5V 0 0.5 1 1.5 2 2.5 3 0 0.8 1.6 2.4 3.2 4.0 4.8 V DS, Drain-to-Source Voltage(V) VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 72 Figure 2. Transfer Characteristics 1.5 RDS(on), On-Resistance Normalized 60 1.4 1.3 1.2 1.1 1.0 0.0 V G S =4.5V I D =13A R DS(on)(m Ω) 48 V G S =4.5V 36 24 V G S =10V 12 0 V G S =10V I D =15A 1 8 16 24 32 40 0 25 50 75 100 125 150 T j ( °C ) I D, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.2 Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.15 Vth, Normalized Gate-Source Threshold Voltage 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 V DS =V G S I D =250uA ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 100 125 150 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) Tj, Junction.


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