STB458D

Green Product STB458D Ver 1.0 S a mHop Microelectronics C orp. Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRODUCT SUMMARY (N-Channel) V DSS 40V PRODUCT SUMMARY (P-Channel) V DSS -40V ID 30A R DS(ON) (m Ω) Max 10.5 @ VGS=10V ID -24A R DS(ON) (m Ω) Max 17 @ VGS=-10V 24 @ VGS=-4.5V 14 @ VGS=4.5V D1 D1/D2 D2 G1 S1 G1 D1/D2 S2 G2 G2 STB SERIES TO-263 5L S1 N-ch S2 P -ch ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol Parameter N-Channel P-Channel VDS Drain-Source Voltage -40 40 VGS Gate-Source Voltage ±20 ±20 TC=25°C 30 -24 a ID Drain Current-Continuous TC=70°C 23.7 -19 b IDM 68 -60 -Pulsed d 170 210 EAS Sigle Pulse Avalanche Energy PD TJ, TSTG Maximum Power Dissipation a Units V V A A A mJ W W °C TC=25°C TC=70°C 15.6 10 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient 8 80 °C/W °C/W Apr,23,2010 1 www.samhop.com.tw STB458D Ver 1.0 N-Channel ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=32V , VGS=0V Min 40 Typ Max Units V A nA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance VGS= ±20V , VDS=0V 1 ±100 3 10.5 14 VDS=VGS , ID...