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C4139 Datasheet, Equivalent, 2SC4139.

2SC4139

2SC4139

 

 

 

Part C4139
Description 2SC4139
Feature 2SC4139 Silicon NPN Triple Diffused Plan ar Transistor (High Voltage and High Sp eed Switchihg Transistor) sAbsolute max imum ratings (Ta=25°C) Symbol VCBO VCE O VEBO IC IB PC Tj Tstg 2SC4139 500 400 10 15(Pulse30) 5 120(Tc=25°C) 150 – 55 to +150 Unit V V V A A W °C °C Ap plication : Switching Regulator and Gen eral Purpose External Dimensions MT-100 (TO3P) 5.
0±0.
2 15.
6±0.
4 9.
6 2.
0 1.
8 4 .
8±0.
2 2.
0±0.
1 sElectrical Character istics Symbol ICBO IEBO V(BR)CEO hFE VC E(sat) VBE(sat) fT COB Conditions VCB=5 00V VEB=10V IC=25mA VCE=4V, IC=8A IC=8A , IB=1.
6A IC=8A, IB=1.
6A VCE=12V, IE= 1.
5A VCB=10V, f=1MHz 100m .
Manufacture Sanken
Datasheet
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Part C4139
Description 2SC4139
Feature 2SC4139 Silicon NPN Triple Diffused Plan ar Transistor (High Voltage and High Sp eed Switchihg Transistor) sAbsolute max imum ratings (Ta=25°C) Symbol VCBO VCE O VEBO IC IB PC Tj Tstg 2SC4139 500 400 10 15(Pulse30) 5 120(Tc=25°C) 150 – 55 to +150 Unit V V V A A W °C °C Ap plication : Switching Regulator and Gen eral Purpose External Dimensions MT-100 (TO3P) 5.
0±0.
2 15.
6±0.
4 9.
6 2.
0 1.
8 4 .
8±0.
2 2.
0±0.
1 sElectrical Character istics Symbol ICBO IEBO V(BR)CEO hFE VC E(sat) VBE(sat) fT COB Conditions VCB=5 00V VEB=10V IC=25mA VCE=4V, IC=8A IC=8A , IB=1.
6A IC=8A, IB=1.
6A VCE=12V, IE= 1.
5A VCB=10V, f=1MHz 100m .
Manufacture Sanken
Datasheet
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