M2N1G64TUH8G5F

M2N1G64TUH8G5F / M2S1G64TUH8G4F / M2N2G64TU8HG5B / M2N2G64TU8HG4B 1GB: 128M x 64 / 2GB: 256M x 64 PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Based on DDR2-667/800 64Mx16 (1GB)/128Mx8 (2GB) SDRAM G-Die Features Performance: Speed Sort DIMM CAS Latency fck – Clock Freqency tck – Clock Cycle Data Transfer Speed PC2-5300 -3C 5 333 3 667 PC2-6400 -AC 5 400 2.5 800 MHz ns Mbps Automatic and controlled precharge commands Programmable Operation: - DIMM  Latency: 3, 4, 5 - Burst Type: Sequential or Interleave - Burst Length: 4, 8 - Operation: Burst Read and Write 13/10/2 Addressing (1GB) 14/10/2 Addressing (2GB) 7.8 s Max. Average Periodic Refresh Interval Serial Presence Detect Gold contacts 1GB module’s SDRAMs are 84-ball BGA Package 2GB module’s SDRAMs are 60-ball BGA Package RoHS compliance Unit 200-Pin Small Outline Dual In-Line Memory Module (SO-DIMM) 1GB: 128Mx64 Unbuffered DDR2 SO-DIMM based on 64M x16 DDR2 SDRAM G-Die devices. 2GB: 256Mx64 Unbuffered DDR2 SO-DIMM based on 128M x8 DDR2 SDRAM G-Die devices. Intended for 333MHz and 400MHz applications Inputs and outputs are SSTL-18 compatible VDD = VDDQ = 1.8V ± 0.1V SDRAMs have 8 internal banks for concurrent operation Differential clock inputs Data is read or written on both clock edges DRAM DLL aligns DQ and DQS transitions with clock transitions. Address and control signals are fully synchronous to positive clock edge Auto Refresh (CBR) and Self Refresh Modes Description...