M2F4G64CB8HB5N

M2F2G64CB88B7N / M2F4G64CB8HB5N M2F2G64CB88BHN / M2F4G64CB8HB9N 2GB: 256M x 64 / 4GB: 512M x 64PC3-8500 / PC3-10600/PC-12800 Unbuffered DDR3 SDRAM DIMM Based on DDR3-1066/1333/1600 256Mx8 (2GB/4GB) SDRAM B-Die Features Performance: Speed Sort DIMM CAS Latency fck – Clock Frequency tck – Clock Cycle fDQ – DQ Burst Frequency PC3-8500 -BE 7 533 1.875 1066 PC3-10600 -CG 9 667 1.5 1333 PC3-12800 -DI 11 800 1.25 1600 MHz ns Mbps Programmable Operation: - DIMM  Latency: 6,7,8,9,10,11 - Burst Type: Sequential or Interleave - Burst Length: BC4, BL8 - Operation: Burst Read and Write Two different termination values (Rtt_Nom & Rtt_WR) 15/10/1 (row/column/rank) Addressing for 2GB 15/10/2 (row/column/rank) Addressing for 4GB Extended operating temperature rage Auto Self-Refresh option Serial Presence Detect Gold contacts 2GB/4GB SDRAMs are in 78-ball BGA Package RoHS compliance and Halogen free Unit 240-Pin Dual In-Line Memory Module (UDIMM) 256Mx64 (2GB) / 512Mx64 (4GB) DDR3 Unbuffered DIMM based on 256Mx8 DDR3 SDRAM B-Die devices. Intended for 533MHz/667MHz/800MHz applications Inputs and outputs are SSTL-15 compatible VDD = VDDQ = 1.5V ± 0.075V SDRAMs have 8 internal banks for concurrent operation Differential clock inputs Data is read or written on both clock edges DRAM DLL aligns DQ and DQS transitions with clock transitions. Address and control signals are fully synchronous to positive clock edge Nominal and Dynamtic On-Die Termination...