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M2F4G64CB8HB9N Dataheets PDF



Part Number M2F4G64CB8HB9N
Manufacturers Nanya
Logo Nanya
Description Unbuffered DDR3 SDRAM DIMM
Datasheet M2F4G64CB8HB9N DatasheetM2F4G64CB8HB9N Datasheet (PDF)

M2F2G64CB88B7N / M2F4G64CB8HB5N M2F2G64CB88BHN / M2F4G64CB8HB9N 2GB: 256M x 64 / 4GB: 512M x 64PC3-8500 / PC3-10600/PC-12800 Unbuffered DDR3 SDRAM DIMM Based on DDR3-1066/1333/1600 256Mx8 (2GB/4GB) SDRAM B-Die Features •Performance: Speed Sort DIMM CAS Latency fck – Clock Frequency tck – Clock Cycle fDQ – DQ Burst Frequency PC3-8500 -BE 7 533 1.875 1066 PC3-10600 -CG 9 667 1.5 1333 PC3-12800 -DI 11 800 1.25 1600 MHz ns Mbps • Programmable Operation: - DIMM  Latency: 6,7,8,9,10,11 - Burst Typ.

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M2F2G64CB88B7N / M2F4G64CB8HB5N M2F2G64CB88BHN / M2F4G64CB8HB9N 2GB: 256M x 64 / 4GB: 512M x 64PC3-8500 / PC3-10600/PC-12800 Unbuffered DDR3 SDRAM DIMM Based on DDR3-1066/1333/1600 256Mx8 (2GB/4GB) SDRAM B-Die Features •Performance: Speed Sort DIMM CAS Latency fck – Clock Frequency tck – Clock Cycle fDQ – DQ Burst Frequency PC3-8500 -BE 7 533 1.875 1066 PC3-10600 -CG 9 667 1.5 1333 PC3-12800 -DI 11 800 1.25 1600 MHz ns Mbps • Programmable Operation: - DIMM  Latency: 6,7,8,9,10,11 - Burst Type: Sequential or Interleave - Burst Length: BC4, BL8 - Operation: Burst Read and Write • Two different termination values (Rtt_Nom & Rtt_WR) • 15/10/1 (row/column/rank) Addressing for 2GB • 15/10/2 (row/column/rank) Addressing for 4GB • Extended operating temperature rage • Auto Self-Refresh option • Serial Presence Detect • Gold contacts • 2GB/4GB SDRAMs are in 78-ball BGA Package • RoHS compliance and Halogen free Unit • 240-Pin Dual In-Line Memory Module (UDIMM) • 256Mx64 (2GB) / 512Mx64 (4GB) DDR3 Unbuffered DIMM based on 256Mx8 DDR3 SDRAM B-Die devices. • Intended for 533MHz/667MHz/800MHz applications • Inputs and outputs are SSTL-15 compatible • VDD = VDDQ = 1.5V ± 0.075V • SDRAMs have 8 internal banks for concurrent operation • Differential clock inputs • Data is read or written on both clock edges • DRAM DLL aligns DQ and DQS transitions with clock transitions. • Address and control signals are fully synchronous to positive clock edge • Nominal and Dynamtic On-Die Termination support • Halogen free product Description M2F2G64CB88B7N / M2F4G64CB8HB5N / M2F2G64CB88BHN / M2F4G64CB8HB9N are 240-Pin Double Data Rate 3 (DDR3) Synchronous DRAM Unbuffered Dual In-Line Memory Module (UDIMM), organized as one rank of 256Mx64 (2GB) and two ranks of 512Mx64 (4GB) high-speed memory array. Modules use eight 256Mx8 (2GB) 78-ball BGA packaged devices and sixteen 256Mx8 (4GB) 78-ball BGA packaged devices. These DIMMs are manufactured using raw cards developed for broad industry use as reference designs. The use of these common design files minimizes electrical variation between suppliers. All Elixir DDR3 SDRAM DIMMs provide a high-performance, flexible 8-byte interface in a 5.25” long space-saving footprint. The DIMM is intended for use in applications operating of 533MHz/667MHz/800MHz clock speeds and achieves high-speed data transfer rates of 1066Mbps/1333Mbps/1600Mbps. Prior to any access operation, the device  latency and burst/length/operation type must be programmed into the DIMM by address inputs A0-A14 (2GB/4GB) and I/O inputs BA0~BA2 using the mode register set cycle. The DIMM uses serial presence-detect implemented via a serial EEPROM using a standard IIC protocol. The first 128 bytes of SPD data are programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer. Ordering Information REV 1.1 10/2010 1 NANYA reserves the right to change products and specifications without notice. © NANYA TECHNOLOGY CORPORATION M2F2G64CB88B7N / M2F4G64CB8HB5N M2F2G64CB88BHN / M2F4G64CB8HB9N 2GB: 256M x 64 / 4GB: 512M x 64PC3-8500 / PC3-10600/PC-12800 Unbuffered DDR3 SDRAM DIMM Part Number M2F2G64CB88B7N-BE M2F2G64CB88B7N-CG M2F2G64CB88B7N-DI M2F4G64CB8HB5N-BE M2F4G64CB8HB5N-CG M2F4G64CB8HB5N-DI M2F2G64CB88BHN-BE M2F2G64CB88BHN-CG M2F2G64CB88BHN-DI M2F4G64CB8HB9N-BE M2F4G64CB8HB9N-CG M2F4G64CB8HB9N-DI DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1066 DDR3-1333 DDR3-1600 Speed PC3-8500 533MHz (1.875ns @ CL = 7) PC3-10600 667MHz (1.5ns @ CL = 9) PC3-12800 800MHz (1.25ns @ CL = 11) PC3-8500 533MHz (1.875ns @ CL = 7) PC3-10600 667MHz (1.5ns @ CL = 9) PC3-12800 800MHz (1.25ns @ CL= 11) 1.5V PC3-8500 533MHz (1.875ns @ CL = 7) PC3-10600 667MHz (1.5ns @ CL = 9) PC3-12800 800MHz (1.25ns @ CL= 11) PC3-8500 533MHz (1.875ns @ CL = 7) PC3-10600 667MHz (1.5ns @ CL = 9) PC3-12800 800MHz (1.25ns @ CL= 11) 512Mx64 256Mx64 Gold 512Mx64 256Mx64 Organization Power Leads Note Pin Description Pin Name CK0, CK1 ,  CKE0, CKE1    ,  A10/AP A12/ BA0-BA2 ODT0, ODT1 SCL SDA Description Clock Inputs, positive line Clock Inputs, negative line Clock Enable Row Address Strobe Column Address Strobe Write Enable Chip Selects Address Input/Auto-Precharge Address Input/Burst Chop SDRAM Bank Address Inputs Active termination control lines Serial Presence Detect Clock Input Serial Presence Detect Data input/output Pin Name DQ0-DQ63 DQS0-DQS8 - DM0-DM8   VREFDQ , VREFCA VDDSPD SA0, SA1 Vtt VSS VDD NC Data strobes Data strobes complement Data Masks Temperature event pin Reset pin Input/Output Reference SPD and Temp sensor power Serial Presence Detect Address Inputs Termination voltage Ground Core and I/O power No Connect Description Data input/output A0-A9, A11, A13-A15 Address Inputs REV 1.1 10/2010 2 NANYA reserves the right to change products and specifications without notice. © NANYA TECHNOLOGY CORPORATION M2F2G64CB88B7N /.


M2F2G64CB88BHN M2F4G64CB8HB9N M378B5773CH0


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