3.0KP90CA Datasheet (data sheet) PDF





3.0KP90CA Datasheet, Transient Voltage Supresor Diode

3.0KP90CA   3.0KP90CA  

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3KP Series 3KP Transient Voltage Suppre ssor Diode Series General Information T he 3KP series is designed to protect vo ltage sensitive components from high vo ltage, high energy transients. They hav e excellent clamping capability, high s urge capability, low zener impedance an d fast response time. The 3KP series is supplied in YINT Semiconductor ’ s e xclusive,cost-effective,highly reliable and is ideally suited for use in commu nication systems, automotive, numerical controls , process controls, medical e quipment, business machines, power supp lies and many other industrial/consumer Applications. Features       P600 glass passivated chip

3.0KP90CA Datasheet, Transient Voltage Supresor Diode

3.0KP90CA   3.0KP90CA  
junction Plastic package Polarity:Color band denoted positive end (cathode) ex cept Bidirectional. Typical failure mo de is short from over-specified voltage or current Fast response time: typical ly less than 1.0ps from 0 Volts to BV m in. High Temperature soldering:260°C/1 0 seconds at terminals. Solder dip 275 °C max. 10 s, per JESD 22-B106 Typica l Applications Use in sensitive electro nics protection against voltage transie nts induced by inductive load switching and lighting on ICs, MOSFET, signal li nes of sensor units for consumer, compu ter, industrial, automotive, and teleco mmunication. Electrical Characteristic s (@ TA = 25°C Unless Otherwise Noted) Parameter Peak pulse power dissipation with a 10/1000 μs waveform Peak pulse current with a 10/1000 μs waveform Po wer dissipation on infinite heat sink a t TL= 75 °C Peak forward surge current 8.3 ms single half sine-wave Instantan eous forward voltage at 100 A for Unidi rectional only Operating junction and s torage temperature range Symbol PPK IFS M PD Value 3000 Unit Watts Amps Watts Amps V °C See next table 7 300 3.5 - 55 to +175 IFSM VF TJ ,TSTG Notes : ( 1)Non-repetitive current pulse, per fig . 6 and derated above TA = 25 °C per f ig. 2 (2)Measured 8.3 ms single half si ne-wave or equivalent square wave, duty cycle = 4 pulses pe








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