KP1000A

KP1000A/2800V ********************************************************************************************************** HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS Features: . All Diffused Structure . Center Amplifying Gate Configuration . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device ELECTRICAL CHARACTERISTICS AND RATINGS Blocking - Off State Device Type VRRM (1) VDRM (1) VRSM (1) KP1000A 2800 2800 2900 VRRM = Repetitive peak reverse voltage VDRM = Repetitive peak off state voltage VRSM = Non repetitive peak reverse voltage (2) Repetitive peak reverse leakage and off state leakage Critical rate of voltage rise IRRM / IDRM dV/dt (4) 10 mA 100 mA (3) 500 V/µsec Notes: All ratings are specified for Tj=25 oC unless otherwise stated. (1) All voltage ratings are specified for an applied 50Hz/60zHz sinusoidal waveform over the temperature range -40 to +125 oC. (2) 10 msec. max. pulse width (3) Maximum value for Tj = 125 oC. (4) Minimum value for linear and exponential waveshape to 80% rated VDRM. Gate open. Tj = 125 oC. (5) Non-repetitive value. Conducting - on state Parameter Average value of on-state current RMS value of on-state current Peak one cPSTCle surge (non repetitive) current Symbol IT(AV) ITRMS ITSM 18000 I square t Latching current Holding current Peak on-state voltage Critical rate of rise of on-state current (5) I2t IL 800 IH 400 VTM 2.15 di/dt 200 A/µs Switching from VDRM ≤ 1000 V, non-repetitive V ITM = 32...