KP2000A

KP2000A/5000V ********************************************************************************************************** HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS Features: . All Diffused Structure . Spoke Amplifying Gate Configuration . High dV/dt Capability . Pressure Assembled Device CASE 5T ELECTRICAL CHARACTERISTICS AND RATINGS Blocking - Off State Device Type VRRM (1) VDRM (1) VRSM (1) KP2000A 5000 5000 5200 VRRM = Repetitive peak reverse voltage VDRM = Repetitive peak off state voltage VRSM = Non repetitive peak reverse voltage (2) Repetitive peak reverse leakage and off state leakage Critical rate of voltage rise IRRM / IDRM dV/dt (4) 10 mA 200 mA (3) 1000 V/µsec Notes: All ratings are specified for Tj=25 oC unless otherwise stated. (1) All voltage ratings are specified for an applied 50Hz/60zHz sinusoidal waveform over the temperature range -40 to +125 oC. (2) 10 msec. max. pulse width (3) Maximum value for Tj = 125 oC. (4) Minimum value for linear and exponential waveshape to 70% rated VDRM. Gate open. Tj = 125 oC. (5) Non-repetitive value. Conducting - on state Parameter Average value of on-state current RMS value of on-state current Peak one cpstcle surge (non repetitive) current Symbol IT(AV) ITRMS ITSM Min. Max. 2000 4000 40000 36000 Typ. Units A A A A A2s mA Conditions Sinewave,180o conduction,Tc=70oC Nominal value 8.3 msec (60Hz), sinusoidal waveshape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal waveshape, 180o conduct...