JANSR2N7423 Datasheet: RADIATION HARDENED POWER MOSFET





JANSR2N7423 RADIATION HARDENED POWER MOSFET Datasheet

Part Number JANSR2N7423
Description RADIATION HARDENED POWER MOSFET
Manufacture IRF
Total Page 8 Pages
PDF Download Download JANSR2N7423 Datasheet PDF

Features: PD-91299E RADIATION HARDENED POWER MOSF ET THRU-HOLE (T0-254AA) Product Summary Part Number IRHM9250 IRHM93250 Radiati on Level 100K Rads (Si) 300K Rads (Si) RDS(on) 0.315Ω 0.315Ω IRHM9250 JAN SR2N7423 200V, P-CHANNEL REF: MIL-PRF-1 9500/662 RAD-Hard HEXFET TECHNOLOGY ™ ® ID QPL Part Number -14A JANSR2N742 3 -14A JANSF2N7423 International Recti fier’s RAD-Hard HEXFET ® technology provides high performance power MOSFETs for space applications. This technolog y has over a decade of proven performan ce and reliability in satellite applica tions. These devices have been characte rized for both Total Dose and Single Ev ent Effects (SEE). The combination of l ow Rds(on) and low gate charge reduces the power losses in switching applicati ons such as DC to DC converters and mot or control. These devices retain all of the well established advantages of MOS FETs such as voltage control, fast swit ching, ease of paralleling and temperat ure stability of electrical parameters. TO-254AA Features: n n n n n n .

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RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-254AA)
PD-91299E
IRHM9250
JANSR2N7423
200V, P-CHANNEL
REF: MIL-PRF-19500/662
RAD-HardHEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHM9250 100K Rads (Si)
IRHM93250 300K Rads (Si)
RDS(on)
0.315
0.315
ID QPL Part Number
-14A JANSR2N7423
-14A JANSF2N7423
International Rectifier’s RAD-Hard HEXFET®
technology provides high performance power
MOSFETs for space applications. This technology
has over a decade of proven performance and
reliability in satellite applications. These devices
have been characterized for both Total Dose and
Single Event Effects (SEE). The combination of
low Rds(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
TO-254AA
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
n ESD Rating: Class 2 per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
-14
-9.0 A
-56
150 W
1.2 W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
±20
500
-14
15
-41
-55 to 150
300 ( 0.063 in.(1.6mm) from case for 10s)
9.3 (Typical )
V
mJ
A
mJ
V/ns
°C
g
For footnotes refer to the last page
www.irf.com
1
05/13/14

                    
  






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