SVD13N50T

SVD13N50T/F_Datasheet 13A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD13N50T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure DMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES ∗ 13A,500V,RDS(on)(typ)=0.36Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability ORDERING SPECIFICATIONS Part No. SVD13N50T SVD13N50F Package TO-220-3L TO-220F-3L Marking SVD13N50T SVD13N50F Material Pb free Pb free Packing Tube Tube ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation(TC=25°C) Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Storage Temperature Symbol VDS VGS ID PD EAS TJ Tstg 180 1446 150 -55～+150 Rating SVD13N50T 500 ±30 13 51 SVD13N50F Unit V V A W mJ °C °C HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.1 2010.10.21 Page 1 of 8 SVD13N50T/F_Datasheet THERMAL CHARACTERISTICS Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Rating SVD13N50T 1.25 62.5 SVD13N50F...