SVF1N60AM

SVF1N60AM/MJ/B/D/F/H_Datasheet 1A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF1N60AM/MJ/B/D/F/H is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ ∗ ∗ ∗ ∗ 1A,600V,RDS(on)（typ.）=6.8Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF1N60AM SVF1N60AMJ SVF1N60ABTR SVF1N60AD SVF1N60ADTR SVF1N60AF SVF1N60AH Package TO-251D-3L TO-251J-3L TO-92-3L TO-252-2L TO-252-2L TO-220F-3L SOT-223-3L Marking SVF1N60AM SVF1N60AMJ 1N60A SVF1N60AD SVF1N60AD SVF1N60AF SVF1N60AH Material Pb free Pb free Pb free Pb free Pb free Pb free Pb free Packing Tube Tube AMMO Tube Tape & Reel Tube Tape & Reel HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.9 2012.07.27 Page 1 of 12 Silan Microelectronics SVF1N60AM/MJ/B/D/F/H_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Rating Characteristics Symbol SVF1N 60AM/D Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C Single Pul...