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MP04HBT490-24 Dataheets PDF



Part Number MP04HBT490-24
Manufacturers Dynex Semiconductor
Logo Dynex Semiconductor
Description Thyristor/Diode Module
Datasheet MP04HBT490-24 DatasheetMP04HBT490-24 Datasheet (PDF)

MP04---490 MP04---490 Dual Thyristor, Thyristor/Diode Module Advance Information Replaces Jun3 2000 version, DS5204-1.2 DS5204-2.1 April 2001 FEATURES s s s s s s Dual Device Module Electrically Isolated Package Pressure Contact Construction International Standard Footprint Alumina (Non Toxic) Isolation Medium Integral Water Cooled Heatsink KEY PARAMETERS VDRM IT(AV) ITSM(per arm) Visol 2800V 490A 11250A 3000V Code HBT Circuit APPLICATIONS s s s s HBP HBN Fig.1 Circuit diagrams Motor C.

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MP04---490 MP04---490 Dual Thyristor, Thyristor/Diode Module Advance Information Replaces Jun3 2000 version, DS5204-1.2 DS5204-2.1 April 2001 FEATURES s s s s s s Dual Device Module Electrically Isolated Package Pressure Contact Construction International Standard Footprint Alumina (Non Toxic) Isolation Medium Integral Water Cooled Heatsink KEY PARAMETERS VDRM IT(AV) ITSM(per arm) Visol 2800V 490A 11250A 3000V Code HBT Circuit APPLICATIONS s s s s HBP HBN Fig.1 Circuit diagrams Motor Control Controlled Rectifier Bridges Heater Control AC Phase Control VOLTAGE RATINGS Type Number Repetitive Peak Voltages VDRM VRRM V 2800 2600 2400 Conditions MP04---490-28 MP04---490-26 MP04---490-24 Tvj = 0˚ to 125˚C, IDRM = IRRM = 50mA VDSM = VRSM = VDRM = VRRM + 100V respectively Lower voltage grades available. ORDERING INFORMATION Order As: MP04HBT490-28 or MP04HBT490-26 or MP04HBT490-24 MP04HBP490-28 or MP04HBP490-26 or MP04HBP490-24 MP04HBN490-28 or MP04HBN490-26 or MP04HBN490-24 Module type code: MP04. For further information see Package Details. Fig. 2 Electrical connections - (not to scale) Note: When ordering, please use the whole part number. 1/9 www.dynexsemi.com MP04---490 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Symbol IT(AV) Parameter Mean on-state current Test Conditions Half wave resistive load Tcase = 75˚C Tcase = 85˚C IT(RMS ITSM I2t ITSM I2t Visol RMS value Surge (non-repetitive) on-current I2t for fusing Surge (non-repetitive) on-current I2t for fusing Isolation voltage Tcase = 75˚C 10ms half sine, Tj = 125˚C VR = 0 10ms half sine, Tj = 125˚C VR = 50% VDRM Commoned terminals to base plate. AC RMS, 1 min, 50Hz Max. 490 420 770 11.25 633 x 103 9 506 x 103 3000 Units A A A kA A2s kA A2s V THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Parameter Thermal resistance - junction to water (per thyristor or diode) Test Conditions dc, 4.5 Ltr/min Half wave, 4.5 Ltr/min 3 Phase, 4.5 Ltr/min Rth(c-hs) Thermal resistance - case to heatsink (per thyristor or diode) Tvj Tstg Virtual junction temperature Storage temperature range Screw torque Mounting - M6 Electrical connections - M10 Weight (nominal) Mounting torque = 5Nm with mounting compound Reverse (blocking) –40 125 130 ˚C ˚C Min. Max. 0.056 0.060 0.066 0.02 Units ˚C/kW ˚C/kW ˚C/kW ˚C/kW 6 (35) Nm (lb.ins) 12 (106) Nm (lb.ins) 1580 g 2/9 www.dynexsemi.com MP04---490 DYNAMIC CHARACTERISTICS - THYRISTOR Symbol IRRM/IDRM dV/dt dI/dt Parameter Peak reverse and off-state current Linear rate of rise of off-state voltage Rate of rise of on-state current Test Conditions At VRRM/VDRM, Tj = 125˚C To 67% VDRM, Tj = 125˚C From 67% VDRM to 1500A, gate source 1.5A, tr = 0.5µs, Tj = 125˚C VT(TO) rT Threshold voltage On-state slope resistance At Tvj = 125˚C. See note 1 At Tvj = 125˚C. See note 1 0.91 0.65 V mΩ Min. Max. 50 1000 500 Units mA V/µs A/µs Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these figures due to the impedance of the busbar from the terminal to the semiconductor. GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol VGT IGT VGD VFGM VFGN VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak forward gate voltage Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Test Conditions VDRM = 5V, Tcase = 25oC VDRM = 5V, Tcase = 25oC At VDRM Tcase = 125oC Anode positive with respect to cathode Anode negative with respect to cathode Anode positive with respect to cathode See table fig. 5 Max. 3.5 200 0.25 30 0.25 5 10 150 10 Units V mA V V V V A W W 3/9 www.dynexsemi.com MP04---490 2500 Measured under pulse conditions 25 1: Tj = 125˚C Min 2: Tj = 125˚C Max 1 2 I2t = Î2 x t 2 20 Peak half sine wave on-state current - (kA) Instantaneous on-state current, IT - (A) 2000 1500 15 400 I2t value - (A2s x 103) 1000 10 I2t 350 500 5 300 0 0.5 1.0 1.5 2.0 Instantaneous on-state voltage, VT - (V) 2.5 0 1 ms 10 1 2 3 45 10 250 20 30 50 Cycles at 50Hz Duration Fig. 3 Maximum (limit) on-state characteristics 100 Fig. 4 Surge (non-repetitive) on-state current vs time (with 50% VRSM at Tcase = 125˚C) 0.06 10 Thermal resistance junction to case - (°C/W) Gate trigger voltage VGT - (V) Pulse width Frequency Hz Table gives pulse power PGM in Watts µs 50 100 400 100 150 150 150 200 150 150 125 500 150 150 100 1ms 150 100 25 10ms 20 - 0W 10 W 50 W 20 W 10 5W 0.05 0.04 U 1 rl ppe imi t 99 % 0.03 0.0.


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