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SVF12N60K Dataheets PDF



Part Number SVF12N60K
Manufacturers Silan Microelectronics
Logo Silan Microelectronics
Description 600V N-CHANNEL MOSFET
Datasheet SVF12N60K DatasheetSVF12N60K Datasheet (PDF)

SVF12N60T/F/FG/S/K_Datasheet 12A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF12N60T/F/FG/S/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices ar.

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SVF12N60T/F/FG/S/K_Datasheet 12A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF12N60T/F/FG/S/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 12A,600V,RDS(on)(typ)=0.58Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF12N60T SVF12N60F SVF12N60FG SVF12N60S SVF12N60STR SVF12N60K Package TO-220-3L TO-220F-3L TO-220F-3L TO-263-2L TO-263-2L TO-262-3L Marking SVF12N60T SVF12N60F SVF12N60FG SVF12N60S SVF12N60S SVF12N60K Material Pb free Pb free Halogen free Pb free Pb free Pb free Packing Tube Tube Tube Tube Tape&Reel Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.5 2012.08.23 Page 1 of 9 Silan Microelectronics SVF12N60T/F/FG/S/K_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Ratings Characteristics Symbol SVF12N 60T Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Range Storage Temperature Range TC=25°C TC=100°C VDS VGS ID IDM PD EAS TJ Tstg 225 1.8 51 0.41 795 -55~+150 -55~+150 SVF12N 60F(G) 600 ±30 12 9 48 180 1.44 213 1.7 SVF12N 60S SVF12N 60K V V A A W W/°C mJ °C °C Unit THERMAL CHARACTERISTICS Ratings Characteristics Symbol SVF12N 60T Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RθJC RθJA 0.56 62.5 SVF12N 60F(G) 2.44 120 SVF12N 60S 0.69 62.5 SVF12N 60K 0.59 62.5 °C/W °C/W Unit ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) Characteristics Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Symbol BVDSS IDSS IGSS VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd (Note 2,3) VDS=480V,ID=12A, VGS=10V (Note 2,3) VDD=300V,ID=12A, RG=25Ω VDS=25V,VGS=0V, f=1.0MHZ Test conditions VGS=0V, ID=250µA VDS=600V, VGS=0V VGS=±30V, VDS=0V VGS= VDS, ID=250µA VGS=10V, ID=6.0A Min. 600 --2.0 -----------Typ. ----0.58 1469.9 161.2 5.0 37.0 71.67 80.0 43.67 24.35 7.79 7.34 Max. -1.0 ±100 4.0 0.75 -----ns -----nC pF Unit V µA nA V Ω HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.5 2012.08.23 Page 2 of 9 Silan Microelectronics SVF12N60T/F/FG/S/K_Datasheet SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Notes: 1. L=30mH, IAS=6.66A, VDD=140V, RG=25Ω, starting TJ=25°C; Symbol IS ISM VSD Trr Qrr Test conditions Integral MOSFET IS=12A,VGS=0V IS=12A,VGS=0V, dIF/dt=100A/µS (Note 2) Reverse p-n Junction Diode in the Min. -----Typ. ---574.44 5.42 Max. 12 48 1.3 --A V ns µC Unit 2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%; 3. Essentially independent of operating temperature. TYPICAL CHARACTERISTICS Figure 1. On-Region Characteristics 100 100 Variable VGS=4.5V VGS=5V VGS=5.5V VGS=6V VGS=7V VGS=8V VGS=10V VGS=15V -55°C 25°C 150°C Figure 2. Transfer Characteristics Drain Current – ID(A) 10 Drain Current – ID(A) 10 1 Notes: 1.250µS pulse test 2.TC=25°C 1 Notes: 1.250µS pulse test 2.VDS=50V 0.1 0.1 0.1 100 0 1 2 3 4 5 6 7 8 9 10 1 10 Drain-Source Voltage – VDS(V) Figure 3. On-Resitance Variation vs. Drain Current and Gate Voltage Gate-Source Voltage– VGS(V) Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature -55°C 25°C 150°C 0.66 100 Drain-Source On-Resistance – RDS(ON)(Ω) 0.65 0.64 0.63 0.62 0.61 0.60 0.59 0.58 0 2 VGS=10V VGS=20V Reverse Drain Current – IDR(A) 10 Notes: 1.250µS pulse test 2.VGS=0V 1 Note: TJ=25°C 0.1 4 6 8 10 12 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Drain Current – ID(A) Source-Drain Voltage– VSD(V) HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.5 2012.08.23 Page 3 of 9 Silan Microelectronics SVF12N60T/F/FG/S/K_Datasheet TYPICAL CHARACTERISTICS(continued) Figure 5. Capacitance Characteristics 3000 2500 12 Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd Figure 6. Gate Charge Characteristics VDS=480V VDS=300V VDS=120V Gate-Source Voltage– VGS(V) 10 8 6 4 Capasistance(pF) 2000 1500 1000 500 0 0.1 Ciss Coss Crss Notes: 1. VGS=0V 2. f=1MHz 2 Note: ID=12A 0 1 10 100 0 5 10 15 20 25 Drain-Source Voltage – VDS(V) To.


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