SVD5N60T/SVD5N60F_Datasheet
5A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD5N60T/F is an N-channel enhancement mode po...
SVD5N60T/SVD5N60F_Datasheet
5A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD5N60T/F is an N-channel enhancement mode power MOS field effect
transistor which is produced using Silan proprietary S-Rin
TM
structure DMOS technology. The improved planar stripe
cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
∗ 5A,600V,RDS(on)(typ)=1.7Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability
NOMENCLATURE
ORDERING SPECIFICATIONS
Part No. SVD5N60T SVD5N60F Package TO-220-3L TO-220F-3L Marking SVD5N60T SVD5N60F Material Pb free Pb free Packing Tube Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.3
2010.10.19 Page 1 of 8
SVD5N60T/SVD5N60F_Datasheet
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD EAS TJ Tstg 120 0.96 352 -55~+150 -55~+150 Rating SVD5N60T 600 ±30 5 20 40 0.32 SVD5N60F Unit V V A A W W/°C mJ °C °C
THERMAL CHARACTERISTICS
Parameter Thermal Resistance, Junction-to-Case Thermal Resis...