SVF7N60T

SVF7N60T/F_Datasheet 7A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 7A,600V,RDS(on)（typ）=1.0Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF7N60T SVF7N60F Package TO-220-3L TO-220F-3L Marking SVF7N60T SVF7N60F Material Pb free Pb free packing Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2011.01.17 Page 1 of 8 SVF7N60T/F_Datasheet ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Range Storage Temperature Range TC=25°C TC=100°C Symbol VDS VGS ID IDM PD EAS TJ Tstg 145 1.16 489 -55～+150 -55～+150 Ratings SVF7N60T 600 ±30 7.0 4.0 28 45 0.36 SVF7N60F Unit V V A A W W/°C mJ °C °C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, J...