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SVD1N80T Dataheets PDF



Part Number SVD1N80T
Manufacturers Silan Microelectronics
Logo Silan Microelectronics
Description 800V N-CHANNEL MOSFET
Datasheet SVD1N80T DatasheetSVD1N80T Datasheet (PDF)

SVD1N80B/F/M/T_Datasheet 1A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD1N80B/F/M/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely u.

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SVD1N80B/F/M/T_Datasheet 1A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD1N80B/F/M/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. TO-251-3L TO-220F-3L 1 3 1.Gate 2.Drain 3.Source TO-220-3L 2 FEATURES ∗ ∗ ∗ ∗ ∗ TO-92-3L 1A,800V,RDS(on)(typ)=13.5Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVD1N80M SVD1N80T SVD1N80B SVD1N80BTR SVD1N80F Package TO-251-3L TO-220-3L TO-92-3L TO-92-3L TO-220F-3L Marking SVD1N80M SVD1N80T 1N80B 1N80B SVD1N80F Material Pb free Pb free Pb free Pb free Pb free Packing Tube Tube Bulk AMMO Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2011.01.17 Page 1 of 10 SVD1N80B/F/M/T_Datasheet ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Range Storage Temperature Range TJ Tstg Symbol VDS VGS ID IDM PD EAS 9 0.07 23 0.18 23 -55~+150 -55~+150 Rating SVD1N80B SVD1N80F SVD1N80M SVD1N80T 800 ±30 1.0 4.0 33 0.26 45 0.36 Unit V V A A W W/°C mJ °C °C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-toCase Thermal Resistance, Junction-toAmbient Symbol Rating SVD1N80B SVD1N80F SVD1N80M SVD1N80T 13.89 120 4.43 120 3.79 110 2.78 62.5 Unit °C/W °C/W RθJC RθJA ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted) Characteristics Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Symbol BVDSS IDSS IGSS VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VGS=10V (Note 2,3) Test conditions VGS=0V, ID=250µA VDS=800V, VGS=0V VGS=±30V, VDS=0V VGS= VDS, ID=250µA VGS=10V, ID=0.5A VDS=25V,VGS=0V, f=1.0MHZ VDD=400V,ID=1.0A, RG=25Ω (Note 2,3) VDS=640V,ID=1.0A, Min. 800 --3.1 -----------Typ. ----13.5 160.9 15.5 1.35 8.13 15.13 12.80 20.93 5.35 1.28 2.59 REV:1.0 Max. -10 ±100 4.4 16 2011.01.17 Page 2 of 10 nC ns pF Unit V µA nA V Ω HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn SVD1N80B/F/M/T_Datasheet SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Notes: 1. L=30mH,IAS=1.17A,VDD=110V,RG=25Ω, starting TJ=25°C; Symbol IS ISM VSD Trr Qrr Test conditions Integral Reverse P-N Junction Diode in the MOSFET IS=1.0A,VGS=0V IS=1.0A,VGS=0V, dIF/dt=100A/µS (Note 2) Min. -----Typ. ---160 0.3 Max. 1.0 4.0 1.5 --A V ns µC Unit 2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%; 3. Essentially independent of operating temperature. TYPICAL CHARACTERISTICS Figure 1. On-Region Characteristics Variable VGS=4.0V VGS=4.5V VGS=5.0V VGS=5.5V VGS=6.0V VGS=7.0V VGS=8.0V VGS=10V VGS=15V Notes: 1. 250μs Pulse Test 2. Tc=25 C Figure 2. Transfer Characteristics 10 1.0 . ID, Drain Current [A] ID Drain current [A] -55 C 25 C 150 C 1 : 1. 250μs Pulse Test 2. VDS=40V 0.1 1 10 0.1 0 1 2 3 4 5 6 7 8 9 10 VDS Drain-source voltage[V] VGS, Gate-Source Voltage [V] Figure 3. On-Resitance Variation vs. Drain Current and Gate Voltage 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 10 IDR Reverse Drain Current [A] RDS(on) [Ω], Drain-Source On-Resistance VGS= 10.0V VGS= 20.0V -55 C 25 C 150 C 1 Note: TJ=25°C Notes: 1. 250μs Pulse Test 2. VGS=0V 0 0.5 1 1.5 2 0.1 0.2 0.4 0.6 0.8 1 1.2 1.4 ID, Drain Current [A] VSD, Source-Drain voltage [V] HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2011.01.17 Page 3 of 10 SVD1N80B/F/M/T_Datasheet TYPICAL CHARACTERISTICS (continued) HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2011.01.17 Page 4 of 10 SVD1N80B/F/M/T_Datasheet TYPICAL CHARACTERISTICS (continued) Figure 9-3. Max. Safe Operating Area(SVD1N80M) 101 Operation in This Area is Limited by RDS(ON) 100µs 100 10ms DC 10 -1 Figure 9-4. Max. Safe Operating Area(SVD1N80T) 101 Operation in This Area is Limited by RDS(ON) 100µs 100 DC 10-1 1ms 10ms 1ms Notes: 1.TC=25°C 2.Tj=150°C 3.Single Pulse 100 101 102 103 Notes: 1.TC=25°C 2.Tj=150°C 3.Single Pul.


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