SVD2N65DTR

SVD2N65M/F/T/D_Datasheet 2A, 650V N-Channel MOSFET DESCRIPTION SVD2N65M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM 2 structure VDMOS technology. The improved 1 3 TO-251-3L planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. 1. Gate 2. Drain 3. Source TO-252-2L FEATURES TO-220-3L TO-220F-3L ∗ ∗ ∗ ∗ ∗ 2A, 650V,RDS(on)(typ.)=4.5Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVD2N65M SVD2N65F SVD2N65T SVD2N65D SVD2N65DTR Package TO-251-3L TO-220F-3L TO-220-3L TO-252-2L TO-252-2L Marking SVD2N65M SVD2N65F SVD2N65T SVD2N65D SVD2N65D Material Pb free Pb free Pb free Pb free Pb free Packing Tube Tube Tube Tube Tape & Reel HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.1 2010.10.19 Page 1 of 9 SVD2N65M/F/T/D_Datasheet ABSOLUTE MAXIMUM RATINGS (unless otherwise noted, TC=25°C) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (TC=25°C) - Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Storage Temperature Symbol VDS VGS ID PD EAS TJ Tstg 44 ...