SVD12N65F

SVD12N65T/F_Datasheet 12A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD12N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 12A,650V,RDS(on)(typ)=0.64Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING SPECIFICATIONS Part No. SVD12N65T SVD12N65F Package TO-220-3L TO-220F-3L Marking SVD12N65T SVD12N65F Material Pb free Pb free Packing Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.2 2010.10.25 Page 1 of 9 SVD12N65T/F_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD EAS TJ Tstg 225 1.8 1074 150 -55～+150 Rating SVD12N65T 650 ±30 12 48 51 0.41 SVD12N65F Unit V V A A W W/°C mJ °C °C THERMAL CHARACTERISTICS Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, ...