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NT16TC72C4NB1NL-BE Dataheets PDF



Part Number NT16TC72C4NB1NL-BE
Manufacturers Nanya Technology
Logo Nanya Technology
Description Registered DDR3 SDRAM DIMM
Datasheet NT16TC72C4NB1NL-BE DatasheetNT16TC72C4NB1NL-BE Datasheet (PDF)

NT2GC72B89B0NJ/NT2GC72B89B2NJ/NT2GC72C89B0NJ/NT2GC72C89B2NJ NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72C4PB2NL/NT4GC72B8PB0NL/NT4GC72C8PB0NL/NT4GC72C8PB2NL NT8GC72B4NB1NJ/NT8GC72B4NB3NJ/NT8GC72C4NB1NJ/NT8GC72C4NB3NJ NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72C4NB3NL 2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72 PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM Based on DDR3-1066/1333 256Mx8 (2GB/4GB) / 512Mx4 (4GB/8GB) SDRAM B-Die Based on DDR3-1066 1Gx4 (DDP) (16GB) SDRAM B-Die Features.

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NT2GC72B89B0NJ/NT2GC72B89B2NJ/NT2GC72C89B0NJ/NT2GC72C89B2NJ NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72C4PB2NL/NT4GC72B8PB0NL/NT4GC72C8PB0NL/NT4GC72C8PB2NL NT8GC72B4NB1NJ/NT8GC72B4NB3NJ/NT8GC72C4NB1NJ/NT8GC72C4NB3NJ NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72C4NB3NL 2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72 PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM Based on DDR3-1066/1333 256Mx8 (2GB/4GB) / 512Mx4 (4GB/8GB) SDRAM B-Die Based on DDR3-1066 1Gx4 (DDP) (16GB) SDRAM B-Die Features •Performance: Speed Sort DIMM CAS Latency fck – Clock Frequency tck – Clock Cycle fDQ – DQ Burst Frequency PC3-8500 -BE 7 533 1.875 1066 PC3-10600 -CG 9 667 1.5 1333 MHz ns Mbps • Programmable Operation: - DIMM  Latency: 6,7,8,9 - Burst Type: Sequential or Interleave - Burst Length: BC4, BL8 - Operation: Burst Read and Write • Two different termination values (Rtt_Nom & Rtt_WR) • 15/10/1 (row/column/rank) Addressing for 2GB • 15/11/1 (row/column/rank) Addressing for 4GB (512Mx4 Device) • 15/10/2 (row/column/rank) Addressing for 4GB (256Mx8 Device) • 15/11/2 (row/column/rank) Addressing for 8GB • 15/11/4 (row/column/rank) Addressing for 16GB • Extended operating temperature rage • Auto Self-Refresh option • Serial Presence Detect • Gold contacts • SDRAMs are in 78-ball BGA Package • RoHS compliance and Halogen free Unit • 240-Pin Registered Dual In-Line Memory Module (RDIMM) • 2GB/4GB: 256Mx72/512Mx72 DDR3 Registered DIMM based on 256Mx8 DDR3 SDRAM B-Die devices • 4GB/8GB: 512Mx72/1024Mx72 DDR3 Registered DIMM based on 512Mx4 DDR3 SDRAM B-Die devices • 16GB: 2Gx72 DDR3 Registered DIMM based on 1024Mx4 (DDP) DDR3 SDRAM B-Die devices • Intended for 533MHz/667MHz applications • Inputs and outputs are SSTL-15 compatible •VDD = VDDQ = 1.5V ± 0.075V (for DDR3) •VDD = VDDQ = 1.35V -0.0675/+0.1V (for DDR3L) • SDRAMs have 8 internal banks for concurrent operation • Differential clock inputs • Data is read or written on both clock edges • DRAM DLL aligns DQ and DQS transitions with clock transitions. • Address and control signals are fully synchronous to positive clock edge • Nominal and Dynamic On-Die Termination support Description NT2GC72B89B0NJ, NT2GC72B89B2NJ, NT2GC72C89B0NJ, NT2GC72C89B2NJ, NT4GC72B4PB0NL, NT4GC72C4PB0NL, NT4GC72C4PB2NL, NT4GC72B8PB0NL ,NT4GC72C8PB0NL , NT4GC72C8PB2NL, NT8GC72B4NB1NJ, NT8GC72B4NB3NJ ,NT8GC72C4NB1NJ, NT8GC72C4NB3NJ, NT16TC72B4NB1NL, NT16TC72C4NB1NL and NT16TC72C4NB3NL are 240-Pin Double Data Rate 3 (DDR3) Synchronous DRAM Registered Dual In-Line Memory Module, organized as one rank of 256Mx72 (2GB), one rank or two ranks of 512Mx72 (4GB), two ranks of 1Gx72 (8GB) and four ranks of 2Gx72 (16GB) high-speed memory array. Modules use nine 256Mx8 (2GB) 78-ball BGA packaged devices, eighteen 256Mx8 (4GB) 78-ball BGA packaged devices, thirty-six 512Mx4 (8GB) 78-ball BGA packaged devices and thirty-six 1Gx4 (DDP) (16GB) 78-ball BGA packaged devices. These DIMMs are manufactured using raw cards developed for broad industry use as reference designs. The use of these common design files minimizes electrical variation between suppliers. All NANYA DDR3 SDRAM DIMMs provide a high-performance, flexible 8-byte interface in a 5.25” long space-saving footprint. The DIMM is intended for use in applications operating of 533MHz/667MHz clock speeds and achieves high-speed data transfer rates of 1066Mbps/1333Mbps. Prior to any access operation, the device  latency and burst/length/operation type must be programmed into the DIMM by address inputs A0-A14 and I/O inputs BA0~BA2 using the mode register set cycle. The DIMM uses serial presence-detect implemented via a serial EEPROM using a standard IIC protocol. The first 128 bytes of SPD data are programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer. REV 1.2 12/2010 1 NANYA reserves the right to change products and specifications without notice. © NANYA TECHNOLOGY CORPORATION NT2GC72B89B0NJ/NT2GC72B89B2NJ/NT2GC72C89B0NJ/NT2GC72C89B2NJ NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72C4PB2NL/NT4GC72B8PB0NL/NT4GC72C8PB0NL/NT4GC72C8PB2NL NT8GC72B4NB1NJ/NT8GC72B4NB3NJ/NT8GC72C4NB1NJ/NT8GC72C4NB3NJ NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72C4NB3NL 2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72 PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM Ordering Information Part Number NT2GC72B89B0NJ-CG NT2GC72B89B2NJ-CG NT4GC72B4PB0NL-CG NT4GC72B8PB0NL-CG NT8GC72B4NB1NJ-CG NT8GC72B4NB3NJ-CG NT16TC72B4NB1NL-BE NT2GC72C89B0NJ-CG NT2GC72C89B2NJ-CG NT4GC72C4PB0NL-CG NT4GC72C4PB2NL-CG NT4GC72C8PB0NL-CG NT4GC72C8PB2NL-CG NT8GC72C4NB1NJ-CG NT8GC72C4NB3NJ-CG NT16TC72C4NB1NL-BE NT16TC72C4NB3NL-BE DDR3-1333 DDR3-1333 DDR3-1333 DDR3-1333 DDR3-1333 DDR3-1333 DDR3-1066 PC3-10600 PC3-10600 PC3-10600 PC3-10600 PC3-10600 PC3-10600 PC3-8500 Speed 667MHz (1.5ns @ CL = 9) 667MHz (1.5ns @ CL = 9) 667MHz (1.5ns @ CL = 9) 667MHz (1.5ns @ CL = 9) 667MHz (1.5ns @ CL = 9) 667MHz (1.5ns @ CL = 9) 533MHz (1.875ns @ CL = 7) 667MHz (1.5ns @ C.


NT8GC72C4NB3NJ-CG NT16TC72C4NB1NL-BE NT16TC72C4NB3NL-BE


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