BLP8G20S-80P

BLP8G20S-80P Power LDMOS transistor Rev. 2 — 13 October 2014 Product data sheet 1. Product profile 1.1 General description 80 W LDMOS transistor for base station applications at frequencies from 1800 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance per section at Tcase = 25 C in a common Doherty demo board. Test signal 2-carrier W-CDMA f (MHz) 1805 to 1880 1880 to 1920 2110 to 2170 [1] IDq (mA) 300 300 300 VDS (V) 28 28 28 PL(AV) (W) 14.2 14.2 14.2 Gp (dB) 17 16.8 16 D (%) 47 46 43 ACPR (dBc) 30 [1] 30 [1] 30 [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing = 5 MHz. 1.2 Features and benefits         Designed for broadband operation (1800 MHz to 2200 MHz) Excellent ruggedness High efficiency Excellent thermal stability Internally matched for ease of use High power gain Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  RF power amplifiers for base station and multi-carrier applications in the 1800 MHz to 2200 MHz frequency range NXP Semiconductors BLP8G20S-80P Power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 Pinning Description gate 2 gate 1 drain 1 drain 2 source [1] Simplified outline   Graphic symbol  SLQLQGH[       DDD [1] Connected to flange. 3. Ordering information Table 3. Ordering information Package Name BLP8G20S-80P Description Version SOT...