MBR30H35PT, MBR30H45PT, MBR30H50PT, MBR30H60PT
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Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
3 2 1
TO-247AD (TO-3P)
PIN 1 PIN 3
PIN 2 CASE
PRIMARY CHARACTERISTICS
IF(AV)
30 A
VRRM
35 V, 45 V, 50 V, 60 V
IFSM
200 A
VF 0.58 V, 0.63 V
IR 150 μA
TJ max. Package
175 °C TO-247AD
Diode variations
Dual Common Cathode
FEATURES • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Solder dip 275 °C max.10 s, per JESD 22-B106 • Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, or polarity protection application.
MECHANICAL DATA Case: TO-247AD (TO-3P) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR30H35PT MBR30H45PT MBR30H50PT MBR30H60PT UNIT
Maximum repetitive peak reverse voltage
Maximum working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current (fig. 1)
Non-repetitive avalanche energy per diode at 25 °C, IAS = 1.5 A, L = 10 mH Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode
VRRM VRWM VDC IF(AV)
EAS
IFSM
35 35 35
45 50 45 50 45 50
30
80
200
60 V 60 V 60 V
A
mJ
A
Peak repetitive reverse surge current per diode
Peak non-repetitive reverse energy (8/20 μs waveform)
Electrostatic discharge capacitor voltage human body model: C = 100 pF, R = 1.5
IRRM (1) ERSM
VC
2.0 30
1.0 A 20 mJ
mJ
Voltage rate of change (rated VR) Operating junction temperature range Storage temperature range
dV/dt TJ TSTG
10 000 - 65 to + 175 - 65 to + 175
V/μs °C °C
Note (1) 2.0 μs pulse width, f = 1.0 kHz
Revision: 13-Aug-13
1 Document Number: 88792
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR30H35PT, MBR30H45PT, MBR30H50PT, MBR30H60PT
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL TEST CONDITIONS
MBR30H35PT MBR30H45PT
TYP.
MAX.
Maximum instantaneous forward voltage per diode
VF (1)
Maximum reverse current at rated VR per diode
IR (2)
IF = 20 A IF = 20 A IF = 30 A IF = 30 A
TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C
0.54
0.62
6.0
0.66 0.58 0.73 0.66 150 25
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms
MBR30H50PT MBR30H60PT
TYP.
MAX.
- 0.74
0.60 0.63
- 0.83
0.66 0.70
- 150
4.0 25
UNIT
V μA mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR30H35PT MBR30H45PT MBR30H50PT
Thermal resistance, junction to case per diode
RJC
1.4
MBR30H60PT
UNIT °C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-247AD
MBR30H45PT-E3/45
6.13
PACKAGE CODE 45
BASE QUANTITY 30/tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
DELIVERY MODE Tube
Average Forward Current (A) Peak Forward Surge Current (A)
40
30
20
10
0 0 25 50 75 100 125 150 175 Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
250 TJ = TJ Max. 8.3 ms Single Half Sine-Wave
200
150
100
50
0 1 10 100 Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode
Revision: 13-Aug-13
2 Document Number: 88792
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR30H35PT, MBR30H45PT, MBR30H50PT, MBR30H60PT
www.vishay.com
Vishay General Semiconductor
100
Instantaneous Forward Current (A)
10 TJ = 150 °C
1
TJ = 25 °C TJ = 125 °C
0.1
0.01 0
MBR30H35PT, MBR30H45PT MBR30H50PT, MBR30H60PT
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Junction Capacitance (pF)
10 000 1000
TJ = 25 °C f = 1.0 MHz
Vsig = 50 mVp-p
100 0.1
1 10 Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance Per Diode
Instantaneous Reverse Leakage Current (mA)
100
10 TJ = 150 °.