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MBR30H45PT Dataheets PDF



Part Number MBR30H45PT
Manufacturers Vishay
Logo Vishay
Description Dual Common-Cathode Schottky Rectifier
Datasheet MBR30H45PT DatasheetMBR30H45PT Datasheet (PDF)

MBR30H35PT, MBR30H45PT, MBR30H50PT, MBR30H60PT www.vishay.com Vishay General Semiconductor Dual Common Cathode Schottky Rectifier High Barrier Technology for Improved High Temperature Performance 3 2 1 TO-247AD (TO-3P) PIN 1 PIN 3 PIN 2 CASE PRIMARY CHARACTERISTICS IF(AV) 30 A VRRM 35 V, 45 V, 50 V, 60 V IFSM 200 A VF 0.58 V, 0.63 V IR 150 μA TJ max. Package 175 °C TO-247AD Diode variations Dual Common Cathode FEATURES • Power pack • Guardring for overvoltage protection • Low.

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MBR30H35PT, MBR30H45PT, MBR30H50PT, MBR30H60PT www.vishay.com Vishay General Semiconductor Dual Common Cathode Schottky Rectifier High Barrier Technology for Improved High Temperature Performance 3 2 1 TO-247AD (TO-3P) PIN 1 PIN 3 PIN 2 CASE PRIMARY CHARACTERISTICS IF(AV) 30 A VRRM 35 V, 45 V, 50 V, 60 V IFSM 200 A VF 0.58 V, 0.63 V IR 150 μA TJ max. Package 175 °C TO-247AD Diode variations Dual Common Cathode FEATURES • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Solder dip 275 °C max.10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, or polarity protection application. MECHANICAL DATA Case: TO-247AD (TO-3P) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR30H35PT MBR30H45PT MBR30H50PT MBR30H60PT UNIT Maximum repetitive peak reverse voltage Maximum working peak reverse voltage Maximum DC blocking voltage Maximum average forward rectified current (fig. 1) Non-repetitive avalanche energy per diode at 25 °C, IAS = 1.5 A, L = 10 mH Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode VRRM VRWM VDC IF(AV) EAS IFSM 35 35 35 45 50 45 50 45 50 30 80 200 60 V 60 V 60 V A mJ A Peak repetitive reverse surge current per diode Peak non-repetitive reverse energy (8/20 μs waveform) Electrostatic discharge capacitor voltage human body model: C = 100 pF, R = 1.5  IRRM (1) ERSM VC 2.0 30 1.0 A 20 mJ mJ Voltage rate of change (rated VR) Operating junction temperature range Storage temperature range dV/dt TJ TSTG 10 000 - 65 to + 175 - 65 to + 175 V/μs °C °C Note (1) 2.0 μs pulse width, f = 1.0 kHz Revision: 13-Aug-13 1 Document Number: 88792 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR30H35PT, MBR30H45PT, MBR30H50PT, MBR30H60PT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MBR30H35PT MBR30H45PT TYP. MAX. Maximum instantaneous forward voltage per diode VF (1) Maximum reverse current at rated VR  per diode IR (2) IF = 20 A IF = 20 A IF = 30 A IF = 30 A TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C 0.54 0.62 6.0 0.66 0.58 0.73 0.66 150 25 Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms MBR30H50PT MBR30H60PT TYP. MAX. - 0.74 0.60 0.63 - 0.83 0.66 0.70 - 150 4.0 25 UNIT V μA mA THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR30H35PT MBR30H45PT MBR30H50PT Thermal resistance, junction to case  per diode RJC 1.4 MBR30H60PT UNIT °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) TO-247AD MBR30H45PT-E3/45 6.13 PACKAGE CODE 45 BASE QUANTITY 30/tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) DELIVERY MODE Tube Average Forward Current (A) Peak Forward Surge Current (A) 40 30 20 10 0 0 25 50 75 100 125 150 175 Case Temperature (°C) Fig. 1 - Forward Current Derating Curve 250 TJ = TJ Max. 8.3 ms Single Half Sine-Wave 200 150 100 50 0 1 10 100 Number of Cycles at 60 Hz Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 13-Aug-13 2 Document Number: 88792 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR30H35PT, MBR30H45PT, MBR30H50PT, MBR30H60PT www.vishay.com Vishay General Semiconductor 100 Instantaneous Forward Current (A) 10 TJ = 150 °C 1 TJ = 25 °C TJ = 125 °C 0.1 0.01 0 MBR30H35PT, MBR30H45PT MBR30H50PT, MBR30H60PT 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Junction Capacitance (pF) 10 000 1000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 0.1 1 10 Reverse Voltage (V) 100 Fig. 5 - Typical Junction Capacitance Per Diode Instantaneous Reverse Leakage Current (mA) 100 10 TJ = 150 °.


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